BD787G (NPN),
BD788G (PNP)
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
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•
Low Collector−Emitter Sustaining Voltage
•
High Current−Gain − Bandwidth Product
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
15
0.12
T
J
, T
stg
–65 to +150
W
mW/_C
_C
Value
60
80
6.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
8.34
Unit
_C/W
MARKING DIAGRAM
YWW
BD78xG
Y
= Year
WW
= Work Week
BD78x = Device Code
x = 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
Device
BD787G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BD788G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
BD787/D
BD787G (NPN), BD788G (PNP)
ELECTRICAL CHARACTERISTICS*
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 20 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125°C)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 200 mAdc, V
CE
= 3.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 4.0 Adc, I
B
= 800 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
Base−Emitter On Voltage
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f = 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
C
= 0)
BD787G
(f = 0.1 MHz)
BD788G
Small−Signal Current Gain
(I
C
= 200 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
f
T
50
C
ob
−
−
h
fe
10
−
50
70
−
−
pF
MHz
h
FE
40
25
20
5.0
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
1.8
2.0
Vdc
0.4
0.6
0.8
2.5
Vdc
250
−
−
−
Vdc
−
V
CEO(sus)
60
I
CEO
−
−
100
mAdc
Vdc
Symbol
Min
Max
Unit
I
CEX
−
−
I
EBO
−
1.0
1.0
0.1
mAdc
mAdc
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data
1. Pulse Test; Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
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2
BD787G (NPN), BD788G (PNP)
16
TC
PD, POWER DISSIPATION (WATTS)
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
140
0
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
+ 30 V
V
CC
25
ms
+ 11 V
0
- 9.0 V
t
r
, t
f
v
10 ns
DUTY CYCLE = 1.0%
R
B
51
-4V
D
1
R
C
SCOPE
500
300
200
100
t, TIME (ns)
70
50
30
20
t
d
@ V
BE(off)
= 5.0 V
BD787 (NPN)
BD788 (PNP)
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
t
r
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
[
100 mA
MSD6100 USED BELOW I
B
[
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
10
7.0
5.0
0.04 0.06
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
0.05
P
(pk)
R
qJC(t)
= r(t) R
qJC
R
qJC
= 8.34°C/W MAX
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC(t)
20
50
100
200
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
Figure 4. Thermal Response
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3
BD787G (NPN), BD788G (PNP)
10
1.0 ms
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
5.0 ms
T
J
= 150°C
dc
100
ms
500
ms
0.5
0.1
0.05
0.02
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
BD787 (NPN) BD788 (PNP)
60 V
0.01
1.0
20 30
2.0 3.0
5.0 7.0 10
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C: T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150_C, T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
2000
1000
700
500
t, TIME (ns)
300
200
100
70
50
30
20
0.04 0.06
t
f
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
200
T
J
= 25°C
100
C, CAPACITANCE (pF)
C
ib
70
50
30
20
(NPN)
(PNP)
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
10
1.0
(NPN)
(PNP)
2.0 3.0
5.0 7.0 10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
50
70 100
C
ob
Figure 6. Turn−Off Time
Figure 7. Capacitance
NPN
BD787
400
300
hFE, DC CURRENT GAIN
200
T
J
= 150°C
25°C
- 55°C
V
CE
= 1.0 V
V
CE
= 3.0 V
hFE, DC CURRENT GAIN
200
NPN
BD788
100
70
50
T
J
= 150°C
25°C
V
CE
= 1.0 V
V
CE
= 3.0 V
100
70
50
30
20
0.04 0.06
0.1
- 55°C
30
20
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
10
0.04 0.06
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 8. DC Current Gain
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4
BD787G (NPN), BD788G (PNP)
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
2.0
T
J
= 25°C
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 3.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
1.2
V
BE(sat)
@ I
C
/I
B
= 10
0.8
V
BE
@ V
CE
= 3.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.8
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
*APPLIES FOR I
C
/I
B
≤
h
FE/3
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.04 0.06
0.1
0.2
q
VB
FOR V
BE
- 55°C to 25°C
0.4
0.6
1.0
2.0
4.0
25°C to 150°C
*q
VC
FOR V
CE(sat)
25°C to 150°C
- 55°C to 25°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
*q
VC
FOR V
CE(sat)
25°C to 150°C
- 55°C to 25°C
q
VB
FOR V
BE
25°C to 150°C
- 55°C to 25°C
- 2.5
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
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