BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
●
●
●
●
●
Designed for Complementary Use with the
BD746 Series
115 W at 25°C Case Temperature
20 A Continuous Collector Current
25 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD745
Collector-base voltage (I
E
= 0)
BD745A
BD745B
BD745C
BD745
Collector-emitter voltage (I
B
= 0)
BD745A
BD745B
BD745C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
50
70
90
110
45
60
80
100
5
20
25
7
115
3.5
90
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
A
W
W
mJ
°C
°C
°C
°C
V
V
UNIT
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD745
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD745A
BD745B
BD745C
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
I
CBO
Collector cut-off
current
V
CE
= 110 V
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
I
CEO
I
EBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
5V
4V
4V
4V
0.5 A
5A
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1 A
I
C
= 5 A
I
C
= 20 A
I
C
= 5 A
I
C
= 20 A
I
C
= 5 A
I
C
= 20 A
I
C
= 1 A
I
C
= 1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
5
(see Notes 5 and 6)
40
20
5
1
3
1
3
V
V
150
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD745
BD745A
BD745B
BD745C
BD745
BD745A
BD745B
BD745C
BD745/745A
BD745B/745C
MIN
45
60
80
100
0.1
0.1
0.1
0.1
5
5
5
5
0.1
0.1
0.5
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.1
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
†
TEST CONDITIONS
I
C
= 5 A
V
BE(off)
= -4.2 V
I
B(on)
= 0.5 A
R
L
= 6
Ω
†
MIN
I
B(off)
= -0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
20
350
500
400
MAX
UNIT
ns
ns
ns
ns
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS635AE
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
I
C
= 10
I
B
t
p
= 300µs, duty cycle < 2%
TCS635AF
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
h
FE
- DC Current Gain
1·0
0·1
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
10
0·1
1·0
10
100
I
C
- Collector Current - A
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
0·01
0·1
1·0
10
100
I
C
- Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS635AC
I
C
- Collector Current - A
10
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
1·0
0·1
BD745
BD745A
BD745B
BD745C
0·01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
120
P
tot
- Maximum Power Dissipation - W
TIS635AB
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 4.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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