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BSB028N06NN3-G

Description
MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
Categorysemiconductor    Discrete semiconductor   
File Size725KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSB028N06NN3-G Overview

MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3

BSB028N06NN3-G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseWDSON-2-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current90 A
Rds On - Drain-Source Resistance2.8 mOhms
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge108 nC
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Dual Source
Pd - Power Dissipation78 W
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height0.7 mm
Length6.35 mm
Transistor Type1 N-Channel
Width5.05 mm
Fall Time6 ns
Moisture SensitiveYes
Rise Time9 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time38 ns
Typical Turn-On Delay Time21 ns
BSB028N06NN3 G
OptiMOS™3
Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Superior thermal resistance
• Dual sided cooling
• low parasitic inductance
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
Product Summary
V
DS
R
DS(on),max
I
D
CanPAK
TM
M
MG-WDSON-2
60
2.8
90
V
mW
A
• Compatible with DirectFET® package MN footprint and outline
2)
Type
BSB028N06NN3 G
Package
MG-WDSON-2
Outline
MN
Marking
0106
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=58 K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
1)
2)
Value
90
85
22
360
590
±20
Unit
A
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=30 A,
R
GS
=25
W
mJ
V
J-STD20 and JESD22
DirectFET® is a trademark of International Rectfier Corporation
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Rev. 2.0
page 1
2014-04-17
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