N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=16Ω
APPLICATIONS
* Telephone handsets
ZVN0124A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
240
160
2
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
240
1
3
20
10
100
500
16
100
85
20
7
7
8
16
8
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=250mA
V
DS
=25V,I
D
=250mA
I
D(on)
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-350
(
3
ZVN0124A
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2V
0
0
20
40
60
80
100
3V
4V
V
GS=
10V
8V
6V
5V
80µs pulse
I
D(on) -
On -State Drain Current (Amps)
I
D(ON)
On State Drain Current(Amps)
1.0
V
GS=
10V
7V
5V
4V
0.8
0.6
3V
0.4
0.2
2V
0
0
2
4
6
8
10
V
DS-
Drain Source Voltage
(Volts)
V
DS-
Drain Source Voltage
(Volts)
Output Characteristics
Saturation Characteristics
20
I
D(ON) -
On-State Drain Current (Amps)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
V
DS=
10V
V
DS=
25V
V
DS-
Drain Source
(Volts)
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
100mA
500mA
I
D=
1A
V
GS
-Gate Source Voltage
(Volts)
V
GS
-Gate Source Voltage
(Volts)
Voltage Saturation Characteristics
R
DS(ON)
-Drain Source Resistance
(Ω)
Transfer Characteristics
100
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
-60 -40 -20
e
rc
ou
-S
n
ai
Dr
Re
ce
an
st
si
R
D
)
on
S(
10
I
D=
1A
500mA
I00mA
V
GS=
10V
I
D=
0.25A
Gate Threshol
d
V
GS=
V
DS
I
D=
1mA
Voltage V
GS
(th)
1
1
10
20
0 20 40 60 80 100 120 140 160
V
GS
-Gate Source Voltage
(Volts)
Temperature (°C)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
V Temperature
3-351
ZVN0124A
TYPICAL CHARACTERISTICS
g
fs
-Forward transconductance (mS)
g
fs
-Forward transconductance (mS)
500
400
500
400
V
DS
=
25V
300
300
V
DS
=
25V
200
200
100
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
2
4
6
.8
10
I
D(On)
-Drain
Current (Amps)
V
GS
-Gate-Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
GS
-
Gate-Source
Voltage (Volts)
70
60
50
C
iss
10
I
D=
700mA
8
6
V
DS
=
50V
100V
180V
C-Capacitance (pF)
40
30
20
10
0
0
10
20
30
40
C
oss
C
rss
50
4
2
0
0
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
1.8
2.0
V
DS
-Drain-Source
Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
1.0
Gate charge v gate-source voltage
P
D
-Power Dissipation (Watts)
0.8
0.6
0.4
0.2
.20
40
60
80 100 120 140 160 180 200
T
amb
- Ambient Temperature (°C)
Power v temperature derating curve (ambient)
3-352
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