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BFU520AR

Description
RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
CategoryDiscrete semiconductor    The transistor   
File Size299KB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BFU520AR Overview

RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor

BFU520AR Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
highest frequency bandL BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
BFU520A
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23
package.
The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.7 dB at 900 MHz
Maximum stable gain 18 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
c
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
T
sp
87
C
I
C
= 5 mA; V
CE
= 8 V
V
CB
= 8 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz
[1]
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
-
60
-
-
Typ
-
-
-
-
5
-
95
0.53
10
Max
24
12
24
2
30
450
200
-
-
Unit
V
V
V
V
mA
mW
pF
GHz

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