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MMBT5401 — PNP Epitaxial Silicon Transistor
November 2014
MMBT5401
PNP Epitaxial Silicon Transistor
Features
• PNP General-Purpose Amplifier
• This device is designed as a general-purpose amplifier
and switch for applications requiring high voltage.
C
E
B
SOT-23
Ordering Information
Part Number
MMBT5401
MMBT5401_D87Z
Marking
2L
2L
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel, 3000 pcs, 7 inch Reel
Tape and Reel, 10000 pcs, 13 inch Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
-150
-160
-5.0
-600
-55 to +150
Unit
V
V
V
mA
°C
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
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