ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V
(BR)DSS
= 40V : R
DS(on)
= 0.05 ; I
D
= 5.2A
P-Channel = V
(BR)DSS
= -40V : R
DS(on)
= 0.06 ; I
D
= -4.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilises a unique structure that combines the benefits
of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
SO8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor drive
•
LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY PER
REEL
500
2,500
PINOUT
ZXMC4A16DN8TA
ZXMC4A16DN8TC
DEVICE MARKING
•
ZXMC
4A16
TOP VIEW
ISSUE 1 - NOVEMBER 2004
1
SEMICONDUCTORS
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
(V
GS
= 10V; T
A
=25°C)
(V
GS
= 10V; T
A
=70°C)
(b)(d)
(V
GS
= 10V; T
A
=25°C)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a) (d)
Linear derating factor
Power dissipation at T
A
=25°C
(a) (e)
Linear derating factor
Power dissipation at T
A
=25°C
(b) (d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
(a)(d)
(b)(d)
SYMBOL
V
DSS
V
GS
I
D
N-channel
40
20
P-channe|
-40
20
UNIT
V
V
5.2
4.1
4.0
I
DM
I
S
I
SM
P
D
24
2.5
24
1.25
10
1.8
14
2.1
17
-55 to +150
-4.7
-3.8
-3.6
-23
2.3
23
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a) (d)
Junction to ambient
(a) (e)
Junction to ambient
(b) (d)
SYMBOL
R
JA
R
JA
R
JA
VALUE
100
70
60
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
2
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
3
SEMICONDUCTORS
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1) (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
40
0.5
100
1.0
0.050
0.075
8.6
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
=40V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250mA, V
DS
=V
GS
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 3.2A
S
V
DS
= 15V, I
D
= 4.5A
Ciss
Coss
Crss
770
92
61
pF
pF
pF
V
DS
= 40V, V
GS
=0V
f=1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
3.3
4.7
29
14
17
2.5
3.8
ns
ns
ns
ns
nC
nC
nC
V
DS
= 30V, V
GS
= 10V
I
D
= 4.5A
V
DD
= 30V, I
D
= 1A
R
G
≅6.0
, V
GS
= 10V
VSD
trr
Qrr
0.8
20
16
0.95
V
ns
nC
T
j
=25°C, I
S
= 4.5A,
V
GS
=0V
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(
3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
4
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
5
SEMICONDUCTORS
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