Bulletin PD-20884 rev. A 10/06
8ETH06PbF
8ETH06FPPbF
Hyperfast Rectifier
Features
•
•
•
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
2500V insulation voltage
UL E78996 approved
Lead-Free ("PbF")
t
rr
= 18ns typ.
I
F(AV)
= 8Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 144°C
@ T
C
= 108°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
(FULLPACK)
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
90
100
16
- 65 to 175
°C
Max
600
8
Units
V
A
Case Styles
8ETH06PbF
8ETH06FPPbF
Base
Cathode
2
1
1
3
3
Cathode
Anode
Cathode
Anode
TO-220AC
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TO-220 FULLPACK
1
8ETH06PbF, 8ETH06FPPbF
Bulletin
PD-20884 rev. A 10/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
600
-
-
-
2.0
1.3
0.3
55
17
8.0
-
2.4
1.8
50
500
-
-
V
V
V
μA
μA
pF
nH
I
R
= 100μA
I
F
= 8A, T
J
= 25°C
I
F
= 8A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 600V
Measured lead to lead 5mm from package body
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
18
20
25
40
2.4
4.8
25
120
22
25
-
-
-
-
-
-
-
-
-
nC
-
ns
A
nC
T
J
= 125°C
A
ns
I
F
= 1A, di
F
/dt = 100A/μs, V
R
= 30V
I
F
= 8A, di
F
/dt = 100A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
di
F
/dt = 600A/μs
V
R
= 390V
I
F
= 8A
di
F
/dt = 200A/μs
V
R
= 390V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
t
rr
I
RRM
Q
rr
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
-
-
-
33
12
220
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque
Per Leg
Per Leg
(Fullpack) Per Leg
Min
-
- 65
-
-
-
-
-
-
6.0
5.0
Typ
-
-
1.4
3.4
-
0.5
2.0
0.07
-
-
Max
175
175
2
4.3
70
-
-
-
12
10
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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8ETH06PbF, 8ETH06FPPbF
Bulletin
PD-20884 rev. A 10/06
100
1000
T
J
= 175˚C
Reverse Current - I
R
(μA)
100
10
1
0.1
150˚C
125˚C
100˚C
Instantaneous Forward Current - I
F
(A)
25˚C
10
0.01
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
0.001
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
1
Junction Capacitance - C
T
(pF)
T J = 25˚C
100
0.1
0
1
2
3
4
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
0.1
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
1
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3
8ETH06PbF, 8ETH06FPPbF
Bulletin
PD-20884 rev. A 10/06
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
170
160
DC
160
140
Square wave (D = 0.50)
Rated Vr applied
see note (3)
150
140
Square wave (D = 0.50)
Rated Vr applied
DC
120
100
80
130
see note (3)
120
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
0
2
4
6
8
10
12
14
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
20
Average Power Loss ( Watts )
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss =
I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
RMS Limit
Fig. 8 - Forward Power Loss Characteristics
4
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8ETH06PbF, 8ETH06FPPbF
Bulletin
PD-20884 rev. A 10/06
60
IF = 16 A
IF = 8 A
400
350
300
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
50
IF = 16 A
IF = 8 A
Qrr ( nC )
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
trr ( ns )
40
250
200
150
100
30
20
50
0
100
10
100
1000
1000
di
F
/dt (A/μs )
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/μs )
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
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