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80CNQ040A

Description
40 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size173KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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80CNQ040A Overview

40 A, 40 V, SILICON, RECTIFIER DIODE

80CNQ040A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, FREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.47 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current5800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-21002 01/05
80CNQ...APbF
80CNQ...ASMPbF
SCHOTTKY RECTIFIER
New GenIII D-61 Package
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125°C
(per leg)
range
80 Amp
Description/ Features
Units
A
V
A
V
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for reli-
able operation up to 150° C junction temperature. Typical
applications are in switching power supplies, converters,
free-wheeling diodes, and reverse battery protection.
150° C T
J
operation
Center tap module
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
80
35 to 45
5800
0.47
- 55 to 150
°C
New fully transfer-mould low profile, small
footprint, high current package
Through-hole versions are currently available for use in
Lead-Free applications ("PbF" suffix)
Case Styles
80CNQ...APbF
80CNQ...ASMPbF
D61-8
www.irf.com
D61-8-SM
1
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