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80CNQ35APBF

Description
40 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size173KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

80CNQ35APBF Overview

40 A, 40 V, SILICON, RECTIFIER DIODE

Bulletin PD-21002 01/05
80CNQ...APbF
80CNQ...ASMPbF
SCHOTTKY RECTIFIER
New GenIII D-61 Package
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125°C
(per leg)
range
80 Amp
Description/ Features
Units
A
V
A
V
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for reli-
able operation up to 150° C junction temperature. Typical
applications are in switching power supplies, converters,
free-wheeling diodes, and reverse battery protection.
150° C T
J
operation
Center tap module
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
80
35 to 45
5800
0.47
- 55 to 150
°C
New fully transfer-mould low profile, small
footprint, high current package
Through-hole versions are currently available for use in
Lead-Free applications ("PbF" suffix)
Case Styles
80CNQ...APbF
80CNQ...ASMPbF
D61-8
www.irf.com
D61-8-SM
1
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