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2SK2595

Description
Silicon N-Channel MOS FET UHF Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size113KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK2595 Overview

Silicon N-Channel MOS FET UHF Power Amplifier

2SK2595 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-CDSO-G2
Contacts2
Reach Compliance Codeunknow
JESD-30 codeR-CDSO-G2
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0206-0400
Rev.4.00
Feb.14.2005
Features
High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W,
ηD
= 50% min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
PLSS0003ZA-A
(Previous code : RP8P)
D
1
G
3
2
1. Gate
2. Source
S
3. Drain
Note:
Marking is "AX".
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
Note1
I
D(pulse)
Note2
Ratings
17
±10
1.1
5
20
150
– 45 to +150
Unit
V
V
A
A
W
°
C
°
C
Pch
Tch
Tstg
Rev.4.00, Feb.14.2005, page 1 of 13
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