STPTIC
Parascan™ tunable integrated capacitor
Datasheet
-
production data
Applications
•
Cellular Antenna open loop tunable matching
network in multi-band GSM/WCDMA/LTE
mobile phone
•
Open loop tunable RF filters
ST
PT
IC
ST
PT
IC
µQFN
Flip Chip
Description
The ST integrated tunable capacitor, offers
excellent RF performance, low power
consumption and high linearity required in
adaptive RF tuning applications. The fundamental
building block of PTIC is a tunable material called
Parascan, which is a version of barium strontium
titanate (BST) developed by Paratek microwave.
BST capacitances are tunable capacitances
intended for use in mobile phone application, and
dedicated to RF tunable applications. These
tunable capacitances are controlled through a
bias voltage ranging from 2 to 20 V. The use of
BST tunable capacitance in mobile phones
enables significant improvement in terms of
radiated performances making the performance
almost insensitive to the external environment.
Features
•
High power capability (+36 dBm)
•
High tuning range (3.5/1)
•
High quality factor (Q)
•
High linearity device
•
Low leakage current
•
Capacitor bias is DC blocked
•
Frequency of operation from DC to 3 GHz
•
8 values available: 1.2 pF, 2.7 pF, 3.3 pF,
3.9 pF, 4.7 pF, 5.6 pF, 6.8 pF and 8.2 pF
•
Analog control voltage
•
Compatible with high voltage control IC
(STHVDAC series)
•
Available in plastic molded package:
– µQFN package 1.2 x 1.6 x 0.9 mm
– Flip Chip 0.65 x 1.0 x 0.3 mm
– Flip Chip 0.65 x 1.2 x 0.3 mm
•
ECOPACK
®
2 compliant component
Benefit
•
RF tunable passive implementation in mobile
phones to optimize antenna radiated
performances.
TM: Parascan is a trade mark of Paratek microwave Inc.
February 2015
This is information on a product in full production.
DocID023772 Rev 4
1/13
www.st.com
STPTIC
Electrical characteristics
2
Electrical characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol
P
IN
Parameter
Input peak power RF
IN
(CW mode)/all RF ports
STPTIC-12
STPTIC-27
STPTIC-33
STPTIC-39
V
ESD(HBM)
Human body model, JESD22-A114-B, all I/O
STPTIC-47
STPTIC-56
STPTIC-68
STPTIC-82
V
ESD(MM)
T
device
T
stg
V
x
Machine model, JESD22-A114-B, all I/O
Device temperature
Storage temperature
Bias voltage
Rating
+36
500
400
(1)
400
(1)
500
V
500
500
500
500
100
+125
°C
-55 to +150
25
V
V
Unit
dBm
1. Currently failing around 400 V, improvement on going to withstand 500 V on 2p7 and 3p3.
Table 3. Recommended operating conditions
Rating
Symbol
Parameter
Min.
RF input power (50% duty cycle mode)
RF
IN
(LB)
RF
IN
(HB)
Operating frequency
Device temperature
Operating temperature
Bias voltage
-30
2
700
Typ.
Max.
Unit
P
IN
F
OP
T
device
T
OP
V
x
+35
+33
3000
+100
dBm
MHz
°C
+85
20
V
DocID023772 Rev 4
3/13
13
STPTIC
Package information
3
Package information
•
•
Epoxy meets UL94, V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 2. µQFN-6L package dimension
1.2 mm
±
0.05 mm
1.6 mm
±
0.05 mm
0.7 mm
A2
A1
0.5 mm
B2
C2
0.425 mm
B1
C1
0.25 mm
± 0.03 mm
27
C
2
C
1
Bias
200 µm
RF2
RF2
Top Metal
DocID023772 Rev 4
0.9 mm
± 0.1 mm
0.35 mm
± 0.03 mm
Figure 3. Recommended PCB land pattern for µQFN-6L package
600 µm
NC
NC
300 µm
RF1
Solder mask opening
250 µm
RF1
300 µm
550 µm
5/13
13
Embedded System
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