PFB6000
N-C
HANNEL
T
RENCH
M
OSFET
APPLICATION
DC motor control
UPS
Class D Amplifier
V
DSS
60V
R
DS(ON)
Typ.
15.8mΩ
I
D
60A
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
PIN CONFIGURATION
TO-220
SYMBOL
D
Front View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current
－
Continuous Tc = 25℃, V
GS
@10V
－
Continuous Tc = 100℃, V
GS
@10V
－
Pulsed Tc = 25℃, V
GS
@10V (Note 2)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=144
μ
H,I
D
=40 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
I
AS
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
60
60
43
241
±20
150
1.0
4.5
-55 to 175
500
300
260
60
V
W
W/℃
V/ns
℃
mJ
℃
℃
A
Unit
V
A
THERMAL RESISTANCE
Symbol
R
θJC
R
θJA
Parameter
Junction-to-case
Junction-to-ambient
Min
Typ
Max
1.0
62
Units
℃/W
℃/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +175℃
1 cubic foot chamber, free air
2004/03/04
Page 1
PFB6000
N-C
HANNEL
T
RENCH
M
OSFET
ORDERING INFORMATION
Part Number
PFB6000
Package
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMP60N03LD13
Characteristic
OFF Characteristics
Drain-to-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Breakdown Voltage Temperature Coefficient
(Reference to 25
℃,
I
D
= 250
μA)
Drain-to-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 25℃)
(V
DS
= 48 V, V
GS
= 0 V, T
J
= 150℃)
Gate-to-Source Forward Leakage
(V
GS
= 20 V)
Gate-to-Source Reverse Leakage
(V
GS
= -20 V)
ON Characteristics
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-to-Source On-Resistance
(V
GS
= 10 V, I
D
= 60A)
Forward Transconductance (V
DS
= 15 V, I
D
= 60A)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Pulse Source Current (Body Diode)
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
(I
S
= 60 A, V
GS
= 0 V)
(I
F
= 60A, V
GS
= 0 V,
d
i
/d
t
= 100A/µs)
Integral pn-diode in MOSFET
I
SM
V
SD
t
rr
Q
rr
55
110
241
1.5
A
V
ns
nC
(Note 4)
Dynamic Characteristics
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DS
= 30 V, I
D
= 60 A,
V
GS
= 10 V) (Note 5)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Resistive Switching Characteristics
(V
DD
= 30 V, I
D
= 60 A,
V
GS
= 10 V,
R
G
= 9.1Ω) (Note 5)
t
d(on)
t
rise
t
d(off)
t
fall
I
S
12.1
64
69
39
60
ns
ns
ns
ns
A
1430
420
88
37.7
8.4
9.8
pF
pF
pF
nC
nC
nC
g
FS
(Note 4)
R
DS(on)
15.8
36
18
S
mΩ
V
GS(th)
1.0
2.0
3.0
V
I
GSS
-100
nA
I
GSS
I
DSS
25
250
100
nA
µA
ΔV
DSS
/∆T
J
0.069
mV/
℃
V
DSS
60
V
Symbol
Min
Typ
Max
Units
Source-Drain Diode Characteristics
2004/03/04
Page 2
PFB6000
N-C
HANNEL
T
RENCH
M
OSFET
Note 1: T
J
= +25℃ to +175℃
Note 2: Repetitive rating; pulse width limited by maximum junction temperature.
Note 3: I
SD
= 60A, di/dt <100A/µs, V
DD
< BV
DSS
, T
J
= +175℃
Note 4: Pulse width < 250µs; duty cycle<2%
Note 5: Essentially independent of operating temerpature.
PACKAGE DIMENSION
TO-220
D
A
c1
φ
F
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
e1
e
b
A1
c
Side View
φ
L1
Front View
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