DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. The
2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
0.4
−0.05
+0.1
1.5
0.65
−0.15
+0.1
0.95
0.95
FEATURES
• NF
• Ga
1.8 dB TYP.
9 dB TYP.
@f = 2.0 GHz
@f = 2.0 GHz
2.9±0.2
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
35
200
150
65 to +150
V
V
V
mA
mW
C
C
0.3
1.1 to 1.4
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
*
f
T
C
re
**
50
100
10
0.3
6.0
8.0
10
1.8
3.0
0.8
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 6 V, I
C
= 10 mA
V
CE
= 6 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 5 mA, f = 2.0 GHz
A
A
S
21e
2
MAG
NF
* Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Class
Marking
h
FE
R43/Q *
R43
50 to 100
R44/R *
R44
80 to 160
R45/S *
R45
125 to 250
* Old Specification / New Specification
Document No. P10361EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
©
0.16
−0.06
+0.1
0.4
−0.05
+0.1
1
3
1984
2SC3585
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
P
T
-Total Power Dissipation-W
Free Air
C
re
-Feed-back Capacitance-pF
200
f = 1.0 MHz
2
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
0.7
0.5
0.3
0.2
100
0
50
100
150
0.1
1
T
A
-Ambient Temperature-°C
2
3
5
7
10
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
10
V
CE
= 6 V
8
V
CE
= 6 V
f = 2.0 GHz
|S
21e
|
2
-Insertion Gain-dB
20
30
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
h
FE
-DC Current Gain
6
50
4
20
2
10
0.5
1
5
10
50
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
30
V
CE
= 6 V
f
T
-Gain Bandwidth Product-MHz
20
MAG-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain -dB
0
1
2
3
5
7
10
I
C
-Collector Current-mA
20
30
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
20
V
CE
= 6 V
I
C
= 10 mA
16
MAG
|S
21e
|
2
12
10
7
5
3
2
8
4
1
2
3
5
7
10
I
C
-Collector Current-mA
20
30
0
0.1
0.2
0.3
0.5 7.0 1.0
f-Frequency-GHz
2.0 3.0
2
Embedded System
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