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DF3A56FUTE85LF

Description
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode
CategoryCircuit protection   
File Size156KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode

DF3A56FUTE85LF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
Vesd - Voltage ESD Contact30 kV
Vesd - Voltage ESD Air Gap-
PolarityUnidirectional
Number of Channels2 Channel
Termination StyleSMD/SMT
Breakdown Voltage5.3 V
Working Voltage2.5 V
Cd - Diode Capacitance65 pF
Package / CaseSOT-323-3
Pd - Power Dissipation100 mW
Maximum Operating Temperature+ 125 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
Unit Weight0.000212 oz
DF3A5.6FU
TOSHIBA Diodes for Protecting against ESD
DF3A5.6FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55
to 125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-2P1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
2.5 V
V
R
= 0, f = 1 MHz
Test Condition
Min
5.3
Typ.
5.6
65
Max
6.0
40
1.0
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±30 kV
Criterion: No damage to device elements
Start of commercial production
2002-06
1
2014-03-01

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