1. Half pitch surface mount type for high density mounting
(Lead pitch : 1.27 mm)
2. High resistance to noise due to high common mode rejection
voltage (CMR : MIN.10kV/µs)
3. Soldering reflow type (230°C, for 30seconds)
4. High temperature tested model
5. Taping package
PC3H2
(1ch)
PC3Q62
(4ch)
6. Recognized by UL, file No. E64380
High Resistance to Noise,
Half Pitch Photocoupler
s
Outline Dimensions
PC3H2
2.6
±0.3
Anode mark
1
(Unit : mm)
S
3 H 2
4.4
±0.2
5.3
±0.3
(1.7)
4
2
3
1.27
0.4
±0.1
±0.25
Epoxy
resin
2.0
±0.2
0.1
±0.1
1
2
3
4
1
2
9
10
3
4
11
12
5
6
13
14
7
8
15
16
0.2
±0.05
s
Applications
1. Programmable controllers
7.0
+0.2
−0.7
+0.4
0.5
−0.2
Parting line
g
( ) : Reference dimensions
Internal connection diagram
4
3
s
Package Specifications
Model No.
PC3H2
PC3Q62
Package specification
Taping reel diameter 330mm (3 000pcs)
Taping reel diameter 330mm (1 000pcs)
Anode
Cathode
Emitter
Collector
s
Absolute Maximum Ratings
Parameter
Symbol
Rating
*1
Forward current
I
F
50
*2
Peak forward current
1
I
FM
Input
V
R
6
Reverse voltage
*1
P
70
Power dissipation
*1
Collector-emitter voltage
V
CEO
70
6
Emitter-collector voltage V
ECO
I
C
50
Output Collector current
*1
Collector dissipation
150
P
C
*1
Total power dissipation
170
P
tot
Operating temperature
T
opr
−30
to
+100
T
stg
−40
to
+125
Tstg Storage temperature
*3
Viso Isolation voltage
V
iso
2.5
*4
Soldering temperature
T
SOL
260
1
2
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
mA
mW
mW
˚C
˚C
kV
rms
˚C
0.2mm or more
PC3Q62
10.3
±
0.3
1.27
±
0.25
Anode
Cathode
Emitter
Collector
16
9
0.4
±
0.1
1
4.4
±
0.2
Primary
Side
mark
S
PC3Q62
C0.4
0.2
±
0.05
Epoxy resin
8
5.3
±
0.3
0.1
±
0.1
2.6
±
0.2
+0.4
0.5
−0.2
6°
Internal connection diagram
16
15
14
13
12
11
10
+0.2
7.0
−0.7
*1 The derating factors of absolute maximum ratings due to ambient temperature
are shown in Fig.2 to 5
*2 Pulse width<=100µs, Duty ratio:0.01, Refer to Fig.6
*3 AC for 1min., 40 to 60% RH, f=60Hz
*4 For 10s
9
1
2
3
4
5
6
7
8
Soldering area
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H2/PC3Q62
s
Electro-optical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Collector dark current
Output
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector current
Collector-emitter
saturation voltage
Isolation resistance
Floating capacitance
Response time
Rise time
Fall time
PC3H2
PC3Q62
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE(sat)
R
ISO
C
f
t
r
t
f
Conditions
I
F
=20mA
V
R
=4V
V=0, f=1kHz
V
CE
=50V,
I
F
=0
V
CE
=20V,
I
F
=0
I
C
=0.1mA
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=1mA
V
CE
=5V
I
F
=20mA
I
C
=1mA
DC500V
40 to 60%RH
V=0, f=1MHz
V
CE
=2V
I
C
=2mA
R
L
=100Ω
Ta=25˚C, R
L
=470Ω
V
CM
=1.5kV(peak)
I
F
=0mA,V
CC
=9V,
Vnp=100mV
MIN.
−
−
−
−
70
6
0.2
−
5×10
10
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
0.1
1×10
11
0.6
4
3
−
MAX.
1.4
10
250
100
−
−
4.0
0.2
−
1.0
18
18
−
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
kV/µs
Input
Transfer
charac-
teristics
*5
Common mode rejection voltage
CMR
*5 Refer to Fig.1
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/d
t
)
V
CM
R
L
V
np
V
CC
V
CM :
High wave
pulse
R
L
=470Ω
V
CC
=9V
V
O
1)
V
cp
V
np
V
CM
(V
cp
Nearly
=
dV/d
t
×C
f
×R
L
)
1) V
cp
: Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
PC3H2/PC3Q62
Fig.2 Forward Current vs. Ambient
Temperature
50
Diode power dissipation P (mW)
Forward current I
F
(mA)
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
100
40
80
70
60
30
20
40
10
0
−30
20
0
−30
0
25
50 55
75
100
125
0
25
50 55
75
100
125
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
250
Collector power dissipation P
C
(mW)
Fig.5 Total Power Dissipation vs. Ambient
Temperature
250
200
Total power dissipation P
tot
(mW)
0
25
50
75
100
125
200
170
150
150
100
100
50
50
0
−30
0
−30
0
25
50
75
100
125
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Fig.6 Peak Forward Current vs. Duty Ratio
2000
1000
500
200
100
50
20
Pulse width<=100µs
T
a
=25°C
Fig.7 Forward Current vs. Forward Voltage
500
200
Ta=75˚C
50˚C
25˚C
0˚C
Peak forward current I
FM
(mA)
Forward current I
F
(mA)
100
50
20
10
5
2
1
−
25˚C
10
5
10
−3
2
5
10
−2
2
5
10
−2
2
5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Duty ratio
Forward voltage V
F
(V)
PC3H2/PC3Q62
Fig.8 Current Transfer Ratio vs. Forward
Current
300
V
CE
=5V
T
a
=25°C
200
Collector current I
C
(mA)
Fig.9 Collector Current vs. Collector-emitter
Voltage
50
P
C
(max)
40
T
a
=25°C
Current transfer ratio CTR (%)
30
I
F
=30mA
20mA
20
100
10mA
10
5mA
1mA
0
2
4
6
8
10
0
1
10
Forward current I
F
(mA)
100
0
Collector-emitter voltage V
CE
(V)
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
150
I
F
=1mA
V
CE
=5V
100
Fig.11 Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.20
0.18
0.16
Collector-emitter saturation
voltage V
CE
(sat) (V)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
I
F
=20mA
I
C
=1mA
Relative current transfer ratio (%)
50
0
−40
−20
0
20
40
60
80
100
0.00
−40
−20
0
20
40
60
80
100
Ambient temperature T
a
(°C)
Ambient temperaturet T
a
(°C)
Fig.12 Collector Dark Current vs. Ambient
Temperature
10
−4
V
CE
=50V
Collector dark current I
CEO
(A)
10
−5
Fig.13 Response Time vs. Load Resistance
100.0
V
CE
=2V
I
C
=2mA
T
a
=25°C
t
f
t
r
t
d
t
s
Response time (µs)
−20
10.0
10
−6
10
−7
1.0
10
−8
10
−9
−40
0
20
40
60
80
100
0.1
0.1
1
Load resistance R
L
(kΩ)
10
Ambient temperature T
a
(°C)
PC3H2/PC3Q62
Fig.14 Test Circuit for Response Time
V
CC
R
D
Input
R
L
Output Input
Output
10%
90%
Voltage gain A
V
(dB)
0
Fig.15 Voltage Gain vs Frequency
V
CE
=5V
I
C
=2mA
T
a
=25°C
R
L
=10kΩ
−10
1kΩ
100Ω
t
d
t
r
t
s
t
f
−20
0.1
1
10
100
1000
Frequency Response f (kHz)
Fig.16 Collector-emitter Saturation Voltage
vs. Forward Current
5
I
C
=0.5mA
Collector-emitter saturation voltage
V
CE
(sat) (V)
4
1mA
3mA
5mA
3
7mA
T
a
=25°C
Fig.17 Reflow Soldering
Only one time soldering is recommended within the temperature
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