PG05DBTFC datasheet, PDF - EEWORLD Datasheet

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PG05DBTFC: Description50 W, BIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size27KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG05DBTFC Overview

50 W, BIDIRECTIONAL, SILICON, TVS DIODE

PG05DBTFC Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-PDSO-F2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	7.8 V
Minimum breakdown voltage	5.8 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F2
Maximum non-repetitive peak reverse power dissipation	50 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG05DBTFC

TVS Diode for ESD

Protection in Portable Electronics

FEATURES

50 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

IEC 61000-4-4(EFT) 40A(tp=5/50ns)

IEC 61000-4-5(Lightning) 5A(tp=8/20 s)

Bidirectional Type Pin Configuration Structure.

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

CATHODE MARK

DIM

MILLIMETERS

1.00 + 0.05

0.80+0.10/-0.05

0.60 + 0.05

0.30 + 0.05

0.40 MAX

0.13 + 0.05

Low clamping voltage.

Low leakage current.

1. ANODE

2. ANODE

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA’s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

TFSC

Marking

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Peak Pulse Power (tp=8/20 s)

Junction Temperature

Storage Temperature

)

stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Junction Capacitance

SYMBOL

RWM

=1mA

RWM

=3V

RWM

=5V

=0V, f=1MHz

TEST CONDITION

MIN.

5.8

TYP.

MAX.

7.8

UNIT

2005. 6. 24

Revision No : 2

SYMBOL

RATING

UNIT

1/1

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