BZW04-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-204AL (DO-41)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.8 V to 376 V
6.45 V to 462 V
6.45 V to 462 V
400 W
1.5 W
40 A
175 °C
Uni-directional, bi-directional
DO-204AL (DO-41)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BZW04-213(B) to BZW04-376(B) for commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
BZW04P-6V4B).
types,
use
B
suffix
(e.g.
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unles otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs
waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next table
1.5
40
3.5/5.0
-55 to +175
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above
F
F
Revision: 02-Dec-13
Document Number: 88316
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (4)
(μA)
1000
500
200
50
10
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
38.0
35.4
33.0
30.0
27.6
25.7
24.0
22.0
19.0
17.8
16.0
14.5
13.0
12.0
10.7
9.6
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.7
1.6
1.5
1.4
1.2
1.1
1.0
0.90
0.80
0.75
0.67
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.5
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
301
344
384
414
438
482
548
603
MAXIMUM
TEMPERATURE
COEFFICIENT
OF
V
BR
(%/°C)
0.057
0.061
0.065
0.073
0.075
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.105
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PART NUMBER
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
BI-DIRECTIONAL TYPES
BZW04-5V8B
BZW04-6V4B
BZW04-7V0B
BZW04-7V8B
BZW04-8V5B
BZW04-9V4B
BZW04-10B
BZW04-11B
BZW04-13B
BZW04-14B
BZW04-15B
BZW04-17B
BZW04-19B
BZW04-20B
BZW04-23B
BZW04-26B
BZW04-28B
BZW04-31B
BZW04-33B
BZW04-37B
BZW04-40B
BZW04-44B
BZW04-48B
BZW04-53B
BZW04-58B
BZW04-64B
BZW04-70B
BZW04-78B
BZW04-85B
BZW04-94B
BZW04-102B
BZW04-110B
BZW04-128B
BZW04-136B
BZW04-145B
BZW04-154B
BZW04-171B
BZW04-188B
BZW04-213B
BZW04-239B
BZW04-256B
BZW04-273B
BZW04-299B
BZW04-342B
BZW04-376B
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
161
171
190
209
237
266
285
304
332
380
418
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
294
315
336
368
420
462
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
78.0
85.5
94.0
102
111
128
136
145
154
171
188
213
239
256
273
299
342
376
MAX.
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derated per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
(4)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
Revision: 02-Dec-13
Document Number: 88316
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
550
550
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
ORDERING INFORMATION
(Example)
PREFERRED P/N
BZW0410-E3/54
BZW0410HE3/54
(1)
Note
(1)
AEC Q101 qualified
UNIT WEIGHT (g)
0.350
0.350
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Measured at
Zero Bias
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
1
100
Measured at Stand-Off
Voltage V
WM
10
0.1
0.1
1
10
100
1000
10 000
1
10
100
1000
t
d
- Pulse Width (µs)
V
BR
- Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
Fig. 4 - Typical Junction Capacitance
P
D
- Power Dissipation (%)
60 Hz
Resistive or
Inductive Load
75
75
50
50
L = 0.375" (9.5 mm)
Lead Lengths
25
25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
t
r
= 10 µs
Peak Value
I
PPM
100
Half Value - I
PP
I
PPM
2
100
Fig. 5 - Power Derating Curve
I
PPM
- Peak Pulse Current, % I
RSM
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
Peak Forward Surge Current (A)
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
Decays to 50 % of I
PPM
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
10
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 02-Dec-13
Document Number: 88316
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Embedded System
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