SM6S10AT thru SM6S43AT
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
DO-218 Compatible
PRIMARY CHARACTERISTICS
V
WM
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 43 V
11.1 V to 52.8 V
4600 W
3600 W
6W
600 A
175 °C
Uni-directional
DO-218AC
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse at T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
4600
W
3600
6.0
See next table
600
-55 to +175
W
A
A
°C
UNIT
Revision: 09-Apr-15
Document Number: 87735
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
www.vishay.com
Vishay General Semiconductor
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM REVERSE
LEAKAGE
AT V
WM
T
J
= 175 °C
I
D
(μA)
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
MAX. PEAK
MAXIMUM
PULSE CURRENT CLAMPING
AT 10/1000 μs
VOLTAGE
WAVEFORM
AT I
PPM
(A)
V
C
(V)
271
253
231
214
198
189
177
167
158
142
130
118
109
101
95
86
79
71
66
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
DEVICE
TYPE
SM6S10AT
SM6S11AT
SM6S12AT
SM6S13AT
SM6S14AT
SM6S15AT
SM6S16AT
SM6S17AT
SM6S18AT
SM6S20AT
SM6S22AT
SM6S24AT
SM6S26AT
SM6S28AT
SM6S30AT
SM6S33AT
SM6S36AT
SM6S40AT
SM6S43AT
BREAKDOWN
VOLTAGE
V
BR
(V)
MIN.
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
MAX.
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
TEST
CURRENT
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
STAND-OFF
VOLTAGE
V
WM
(V)
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
43.0
Note
• For all types maximum V
F
= 1.9 V at I
F
= 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
JC
VALUE
0.95
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM6S10ATHE3/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
2.550
PREFERRED PACKAGE CODE
I
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
Revision: 09-Apr-15
Document Number: 87735
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
10 000
Power Dissipation (W)
6.0
4.0
2.0
Reverse
Surge
Power (W)
1000
0
50
100
150
200
10
100
0
Case Temperature (°C)
Pulse Width (ms) - ½ I
PP
Exponential Waveform
Fig. 1 -
Power Derating Curve
Fig. 4 -
Reverse Power Capability
6000
100
5000
Transient Thermal Impedance (°C/W)
Load Dump Power (W)
10
R
θJA
4000
3000
2000
1
R
θJC
0.1
1000
0
25
50
75
100
125
150
175
0.01
0.01
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 -
Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 -
Typical Transient Thermal Impedance
150
t
r
= 10 μs
Peak Value
I
PPM
Input Peak Pulse Current (%)
T
J
= 25 °C
Pulse Width (t
d
) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100
Half Value - I
PP
I
PPM
2
50
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 -
Pulse Waveform
Revision: 09-Apr-15
Document Number: 87735
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6S10AT thru SM6S43AT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-218AC
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
Vishay General Semiconductor
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
Lead 1
0.197 (5.0)
0.185 (4.7)
0.004 (0.10) (NOM.)
Lead 2 / metal heatsink
0.028 (0.7)
0.020 (0.5)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
Revision: 09-Apr-15
Document Number: 87735
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
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Document Number: 91000
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