TC3967
REV.1_04/27/2005
2W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
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2W Typical Output Power
12.5dB Typical Linear Power Gain at 2.45GHz
High Linearity:
IP3 = 43 dBm Typical
High Power Added Efficiency:
Nominal PAE of 35%
Breakdown Voltage: BV
DGO
≥
15V
Wg = 5 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The Cu-based ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
R
th
CONDITIONS
Output Power at 1dB Gain Compression Point
V
DS
= 8 V
Linear Power Gain
V
DS
= 8 V
Intercept Point of the 3
rd
-order Intermodulation
V
DS
= 8 V, *P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power
Drain-Source Current at V
DS
= 8 V
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
Thermal Resistance
MIN
32
TYP
33
12.5
43
35
600
18
8
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
15
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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Real-time operating system RTOS
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