EEWORLDEEWORLDEEWORLD

Part Number

Search

TPC8207

Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
CategoryDiscrete semiconductor    The transistor   
File Size212KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TPC8207 Overview

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPC8207 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Samacsys DescriptiSilicon N Channel MOS Type
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
TPC8207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8207
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 16 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 µA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
Drain power
dissipation
(t
=
10 s)
(Note 2a)
Drain power
dissipation
(t
=
10 s)
(Note 2b)
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
20
20
±12
6
24
1.5
W
1.1
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
2-6J1E
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Weight: 0.08 g (typ.)
0.75
W
0.45
Circuit Configuration
8
7
6
5
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
46.8
6
0.1
150
−55~150
mJ
A
mJ
°C
°C
1
2
3
4
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06
The magical problem encountered by KICAD
I was happy to pull the wires, but Kicad had some strange problems. I need help from the experts. 1. Both pads 1/2 on a socket are vcc, but the wire can only be pulled to 2, but not 1; 11/12 are gnd, ...
shihuntaotie PCB Design
The process of WEBENCH design + a low-power power application design
In low-power applications, the power consumption of the system is not only related to the frequency, but also closely related to the power supply voltage. The lower the power supply voltage, the lower...
armcu Analogue and Mixed Signal
[Zhixin Technology] ALTERA ZX-2 FPGA Development Board NIOS Learning Board
[url]http://item.taobao.com/item.htm?spm=a1z10.1.w4004-6568874930.1.gAqDAe&id=38226425231[/url]...
zxopen08 FPGA/CPLD
Makefile
Makefile Details...
wjgaas Linux and Android
Help~Running static image processing algorithms on OMAP
Now I want to run a picture jpeg processing algorithm in SEED-dec138. There is already a matlab code, but I don’t know how to implement it better? It mainly reads the jpeg from the sd card and process...
zthjk ARM Technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2827  1370  2329  175  331  57  28  47  4  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号