BC327/328
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC327
: BC328
Collector-Emitter Voltage
: BC327
: BC328
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-30
-45
-25
-5
-800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
Min.
-45
-25
I
C
= -0.1mA, V
BE
=0
-50
-30
I
E
= -10µA, I
C
=0
V
CE
= -45V, V
BE
=0
V
CE
= -25V, V
BE
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA, f=20MHz
V
CB
= -10V, I
E
=0, f=1MHz
100
12
100
40
-5
-2
-2
-100
-100
630
-0.7
-1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
BC327/328
Typical Characteristics
-500
-20
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
-400
-300
mA
- 5.0 A
I
B
= - 4.5m
I
B
= 4.0mA
-
A
I
B
= - 3.5m A
I
B
= - 3.0m A
I
B
= - 2.5m
mA
I
B
=
- 2.0
I
B
=
I
B
=
-16
- 80
µ
A
I
B
=
µ
A
- 70
I
B
=
- 60
µ
A
- 50
P
T
I
B
=
-12
µ
A
- 40
=6
00
mW
I
B
= -
-200
1.5m
A
I
B
=
-8
µ
A
30
µ
A
I
B
= -
I
B
= - 1.0mA
I
B
= - 0.5mA
P
T
= 60
0m W
0
µ
A
I
B
= - 2
-4
-100
I
B
= - 10
µ
A
I
B
= 0
-0
-1
-2
-3
-4
-5
I
B
= 0
-10
-20
-30
-40
-50
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
PULSE
V
CE
= - 2.0V
I
C
= 10 I
B
PULSE
V
CE
(sat)
h
FE
, DC CURRENT GAIN
100
-1
- 1.0V
10
-0.1
V
BE
(sat)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
1000
I
C
[mA], COLLECTOR CURRENT
V
CE
= -1V
PULSE
-100
-10
f
T
[MHz], GAIN-BANDWIDTH PRODUCT
V
CE
= -5.0V
100
-1
-0.1
-0.4
10
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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