TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4240F3
‘4260F3
‘4290F3
‘4320F3
‘4380F3
V
DRM
V
180
200
220
240
270
V
(BO)
V
240
260
290
320
380
D PACKAGE
(TOP VIEW)
T
T
T
T
1
2
3
4
8
7
6
5
R
R
R
R
MDXXAI
Specified ratings require the connection
of pins 1, 2, 3 and 4 for the T terminal.
SL PACKAGE
(TOP VIEW)
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
175
120
60
45
38
50
50
50
35
4
T
1
q
R
2
MDXXAH
MD4XAA
device symbol
D PACKAGE
T
3
T
2
T
1
T
1
SL PACKAGE
T
q
Surface Mount and Through-Hole Options
5
PACKAGE
Small-outline
Small-outline taped
and reeled
Single-in-line
PART # SUFFIX
D
DR
SL
Terminals T and R correspond to the
alternative line designators of A and B
R
6
R
7
R
8
R
2
R
SD4XAE
q
UL Recognized, E132482
description
These high voltage symmetrical transient voltage
suppressor devices are designed to protect two
wire telecommunication applications against
transients caused by lightning strikes and a.c.
power lines. Offered in five voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities.
Transients are initially clipped by breakdown
clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The
high crowbar holding current prevents d.c.
latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
The small-outline 8-pin assignment has been
carefully chosen for the TISP series to maximise
the inter-pin clearance and creepage distances
which are used by standards (e.g. IEC950) to
establish voltage withstand ratings.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
‘4240F3
‘4260F3
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘4290F3
‘4320F3
‘4380F3
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
D Package
SL Package
Linear current ramp, Maximum ramp value < 38 A
I
TSM
di
T
/dt
T
J
T
stg
I
TSP
350
175
120
60
50
38
50
50
45
35
4
6
250
-40 to +150
-40 to +150
A rms
A/µs
°C
°C
A
V
DRM
SYMBOL
VALUE
± 180
± 200
± 220
± 240
± 270
V
UNIT
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T
J
= 25°C
TISP4240F3
PARAMETER
Repetitive peak off-
state current
Breakover voltage
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
±10
±240
±267
±0.15
±0.15
±5
±10
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
57
26
11
95
45
20
57
26
11
±0.6
±3
±0.15
±5
±10
95
45
20
±0.15
±287
±0.6
±3
MIN
TISP4260F3
TYP
MAX
±10
±260
UNIT
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
NOTE
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
R
SOURCE
= 50
Ω,
di/dt < 20 A/µs
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
I
T
= ±5 A, t
W
= 100 µs
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
(see Note 4)
µA
V
V
A
V
A
kV/µs
µA
pF
pF
pF
Impulse breakover volt- dv/dt = ±1000 V/µs,
4: Further details on capacitance are given in the Applications Information section.
PRODUCT
INFORMATION
2
TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and R terminals, T
J
= 25°C
TISP4290F3
PARAMETER
Repetitive peak off-
state current
Breakover voltage
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
±10
±290
±317
±0.15
±0.15
±5
±10
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
57
26
11
95
45
20
57
26
11
±0.6
±3
±0.15
±5
±10
95
45
20
kV/µs
µA
pF
pF
pF
±0.15
±347
±0.6
±3
MIN
TISP4320F3
TYP
MAX
±10
±320
UNIT
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
NOTE
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms,
di/dt < 20 A/µs
dv/dt = ±250 V/ms,
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
(see Note 5)
R
SOURCE
= 300
Ω
I
T
= ±5 A, t
W
= 100 µs
R
SOURCE
= 300
Ω
µA
V
V
A
V
Impulse breakover volt- dv/dt = ±1000 V/µs, R
SOURCE
= 50
Ω,
5: Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
NOTE
Repetitive peak off-
state current
Breakover voltage
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms,
di/dt < 20 A/µs
dv/dt = ±250 V/ms,
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
(see Note 6)
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
57
26
11
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
±10
95
45
20
I
T
= ±5 A, t
W
= 100 µs
R
SOURCE
= 300
Ω
±407
±0.6
±3
TISP4380F3
MIN
TYP
MAX
±10
±380
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
pF
pF
Impulse breakover volt- dv/dt = ±1000 V/µs, R
SOURCE
= 50
Ω,
6: Further details on capacitance are given in the Applications Information section.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
2
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C
5 cm , FR4 PCB
D Package
SL Package
MIN
TYP
MAX
160
105
UNIT
°C/W
PRODUCT
INFORMATION
3
TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
V
(BR)M
I
DRM
V
(BR)
I
(BR)
+v
V
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
INFORMATION
4
TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and T terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC3HAF
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3HAI
1.2
10
I
D
- Off-State Current - µA
Normalised Breakdown Voltages
V
(BO)
1
V
D
= 50 V
0·1
V
D
= -50 V
1.1
V
(BR)M
1.0
V
(BR)
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
Positive Polarity
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3HAJ
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
TC3HAL
1.2
Normalised Breakdown Voltages
I
T
- On-State Current - A
V
(BO)
1.1
V
(BR)M
10
1.0
V
(BR)
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
Negative Polarity
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
150°C
25°C
-40°C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
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