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3CN00019AA

Description
Optoelectronic Device
CategoryLED optoelectronic/LED    photoelectric   
File Size49KB,2 Pages
ManufacturerMietec Alcatel
Download Datasheet Parametric View All

3CN00019AA Overview

Optoelectronic Device

3CN00019AA Parametric

Parameter NameAttribute value
MakerMietec Alcatel
Reach Compliance Codeunknown
Base Number Matches1
Alcatel 1951 DMC
Pigtailed Coaxial Module
622 Mbit/s PIN Detector
Description
Designed to provide high optical
performance for ITU-T G.652 standard
optical fiber and ITU-T G.653 shifted
dispersion fiber, the Alcatel 1951 DMC
consists of a reliable III - V PIN
photodetector integrated in an
hermetic pigtailed coaxial module with
connector.
The Alcatel 1900 DMC module family
includes field-proven, reliable,
InGaAsP PIN photodetector with or
without silicon preamplifier or InGaAsP
Avalanche Photodetector (APD), in an
hermetically sealed coaxial package.
Features
0.9 A/W typical responsivity
Operation at 1310 nm &
1550 nm wavelengths
Case operating temperature
from - 40 to + 85 °C
2.5 GHz typical bandwidth
Low dark current
Low capacitance
Alcatel Reliability and Qualification
Program for built in quality
Space-saving package
Applications
Used in telecommunications and
datacommunication systems, from
medium to high speed for intra-office,
intermediate-reach and long-reach
applications, Alcatel 1900 DMC
modules offer a wide case operating
temperature range from
- 40 to + 85 °C.
Part of the Alcatel 1900 DMC family,
the Alcatel 1951 DMC module is
particularly suited for all types of Long-
Haul, Metro and Access optical links
such as :
Fiber In The Loop (FTTB, FTTC,
FTTH...)
Digital transport links
(SDH/SONET)
Private optical networks
Intra and interoffice links
Optical and electrical characteristics
Symb
Min
0.8
Responsitivity
Detection range
λ
1260
Cut-off frequency
fc
1
Dark current
V
R
= 3 V, P
im
=1 µW, - 3 dB, 85 °C
I
d
Capacitance
V
R
= 3 V
C
d
All electrical characteristics are specified within the overall temperature range.
The typical values are referenced to + 25 °C.
Condition
V
R
= 3 V, 1300 nm
V
R
= 3 V, R > 0.75 A/W
Typ
0.9
2.5
5
0.5
Max
1580
50
1
Unit
A/W
nm
GHz
nA
pF

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