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3CN00410GL

Description
Optoelectronic Device
CategoryLED optoelectronic/LED    photoelectric   
File Size78KB,4 Pages
ManufacturerMietec Alcatel
Download Datasheet Parametric View All

3CN00410GL Overview

Optoelectronic Device

3CN00410GL Parametric

Parameter NameAttribute value
MakerMietec Alcatel
Reach Compliance Codeunknown
Base Number Matches1
Alcatel 1905 LMI
Up to 20 mW WDM L-band version for external modulation
CW 1.55 µm Laser Module with optical Isolator
Description
This laser module contains an Alcatel
SLMQW DFB laser and is designed for use
with external modulation optimized for high
power Wavelength Division Multiplexed
(WDM) systems. The module incorporates a
polarization maintaining fiber pigtail,
thermoelectric cooler, precision thermistor,
and optical isolator for stable operation
under all conditions.
Features
Optimized for use with LiNbO3 external
modulator
Polarization maintaining fiber pigtail
InGaAsP Distributed FeedBack SLMQW (DFB)
laser
Integral optical isolator
Internal TEC and monitor photodiode
Industry-standard hermetic 14-pin butterfly
package
Ultra long haul DWDM synchronous digital
transmission systems
WDM submarine terminal digital transmission
systems
Instrumentation.
Applications
Up to 20 mW output power
Wavelength selection according to
ITU-T G.692 (L-band)
50 GHz spacing available
Optical characteristics
Parameter
Threshold current
Output power
Forward voltage
Laser forward current
Emission wavelength
∆(Emitted-Target)
Wavelength
Laser chip temperature range for tunability
Spectral width
Side mode suppression ratio
Relative Intensity Noise
Photodiode dark current
Wavelength drift vs Tcase
Thermistor resistance
Thermistor temperature coefficient
TEC current
TEC voltage
TE/TM fiber extinction ratio of pigtail
Note :
Symb.
I
th
P
F
V
F
I
F
λm
∆λe
∆λ
SMSR
RIN
Id
∆λ/∆Tc
R
TH
R
t
I
t
V
t
Er
Conditions
Twave = 15 to 30 °C
Twave = 15 to 25 °C
Pf, pin 3 & 11
10 mW, pin 3 & 11
20 mW, pin 3 & 11
@Tchip[2]
@10mW [2]
@20mW [2]
CW, Pf, FWHM
Pf
10MHz to 10 GHz @ Pf
V = -5 V
Min
10
20
Typical
Max
40
2.5
120
210
See table 1
- 0.1
15
15
35
-140
100
0.5
10.3
-5
1.3
2.5
+0.1
30
25
5
Units
mA
mW
mW
V
mA
mA
nm
°C
°C
MHz
dB
dB/Hz
nA
pm/°C
k=Ω
%/K
A
V
dB
9.7
-3
[1]
[1]
20
All limits start of life (except It, Vt), Tsubmount = 25 °C, Tcase = 25 °C, Pf = 20 mW, monitor bias – 5 V, unless otherwise stated
[1] Tcase = 70° C, Tsubmount = 20 °C, P = 20 mW
[2] Tchip = Tλ
.Tλ
is chip temperature required to meet target wavelength (see table 1)
Absolute maximum ratings
Parameters
Min
Max
Unit
Operating case temperature
-10
70
°C
Storage temperature
-40
85
°C
Laser forward current
350
mA
Laser reverse voltage
2
V
Photodiode forward current
1
mA
Photodiode reverse voltage
20
V
TEC Voltage
2.8
V
TEC Current
1.4
A
Lead soldering time (at 260°C)
10
s
Packing Mounting Screw Torque
0.2
Nm
[1] Human body model.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
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