3CN00410RV datasheet, PDF - EEWORLD Datasheet

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3CN00410RV: DescriptionOptoelectronic Device; CategoryLED optoelectronic/LED photoelectric; File Size78KB，4 Pages; ManufacturerMietec Alcatel

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3CN00410RV Overview

Optoelectronic Device

3CN00410RV Parametric

Parameter Name	Attribute value
Maker	Mietec Alcatel
Reach Compliance Code	unknown
Base Number Matches	1

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Alcatel 1905 LMI

Up to 20 mW WDM L-band version for external modulation

CW 1.55 µm Laser Module with optical Isolator

Description

This laser module contains an Alcatel

SLMQW DFB laser and is designed for use

with external modulation optimized for high

power Wavelength Division Multiplexed

(WDM) systems. The module incorporates a

polarization maintaining fiber pigtail,

thermoelectric cooler, precision thermistor,

and optical isolator for stable operation

under all conditions.

Features

•

Optimized for use with LiNbO3 external

modulator

Polarization maintaining fiber pigtail

InGaAsP Distributed FeedBack SLMQW (DFB)

laser

Integral optical isolator

Internal TEC and monitor photodiode

Industry-standard hermetic 14-pin butterfly

package

Ultra long haul DWDM synchronous digital

transmission systems

WDM submarine terminal digital transmission

systems

Instrumentation.

Applications

•

Up to 20 mW output power

Wavelength selection according to

ITU-T G.692 (L-band)

50 GHz spacing available

Optical characteristics

Parameter

Threshold current

Output power

Forward voltage

Laser forward current

Emission wavelength

∆(Emitted-Target)

Wavelength

Laser chip temperature range for tunability

Spectral width

Side mode suppression ratio

Relative Intensity Noise

Photodiode dark current

Wavelength drift vs Tcase

Thermistor resistance

Thermistor temperature coefficient

TEC current

TEC voltage

TE/TM fiber extinction ratio of pigtail

Note :

Symb.

λm

∆λe

Tλ

∆λ

SMSR

RIN

∆λ/∆Tc

Conditions

Twave = 15 to 30 °C

Twave = 15 to 25 °C

Pf, pin 3 & 11

10 mW, pin 3 & 11

20 mW, pin 3 & 11

@Tchip[2]

@10mW [2]

@20mW [2]

CW, Pf, FWHM

10MHz to 10 GHz @ Pf

V = -5 V

Min

Typical

Max

2.5

120

210

See table 1

- 0.1

-140

100

0.5

10.3

-5

1.3

2.5

+0.1

Units

°C

MHz

dB/Hz

pm/°C

k=Ω

%/K

9.7

-3

[1]

All limits start of life (except It, Vt), Tsubmount = 25 °C, Tcase = 25 °C, Pf = 20 mW, monitor bias – 5 V, unless otherwise stated

[1] Tcase = 70° C, Tsubmount = 20 °C, P = 20 mW

[2] Tchip = Tλ

.Tλ

is chip temperature required to meet target wavelength (see table 1)

Absolute maximum ratings

Parameters

Min

Max

Unit

Operating case temperature

-10

°C

Storage temperature

-40

°C

Laser forward current

350

Laser reverse voltage

Photodiode forward current

Photodiode reverse voltage

TEC Voltage

2.8

TEC Current

1.4

Lead soldering time (at 260°C)

Packing Mounting Screw Torque

0.2

[1] Human body model.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.

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