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IRLI520A

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size232KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

IRLI520A Overview

Advanced Power MOSFET

IRLI520A Parametric

Parameter NameAttribute value
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)112 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)9.2 A
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Advanced Power MOSFET
FEATURES
s
Avalanche Rugged Technology
s
Rugged Gate Oxide Technology
s
Lower Input Capacitance
s
Improved Gate Charge
s
Extended Safe Operating Area
s
175℃ Operating Temperature
s
Lower Leakage Current : 10
μA
(Max.) @ V
DS
= 100V
s
Lower R
DS(ON)
: 0.176
Ω
(Typ.)
IRLW/I520A
BV
DSS
= 100 V
R
DS(on)
= 0.22
Ω
I
D
= 9.2 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25℃) *
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Value
100
9.2
6.5
32
±20
112
9.2
4.9
6.5
3.8
49
0.33
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.04
40
62.5
℃/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
1

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package instruction IN-LINE, R-PSIP-T3 D2PAK-3 - IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 - 3 - 3
Reach Compliance Code unknow compli - unknown - unknow
Avalanche Energy Efficiency Rating (Eas) 112 mJ 112 mJ - 457 mJ - 457 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V - 400 V - 400 V
Maximum drain current (ID) 9.2 A 9.2 A - 10 A - 10 A
Maximum drain-source on-resistance 0.22 Ω 0.22 Ω - 0.55 Ω - 0.55 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2 - R-PSIP-T3 - R-PSSO-G2
Number of components 1 1 - 1 - 1
Number of terminals 3 2 - 3 - 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR
Package form IN-LINE SMALL OUTLINE - IN-LINE - SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL - N-CHANNEL
Maximum pulsed drain current (IDM) 32 A 32 A - 40 A - 40 A
Certification status Not Qualified Not Qualified - Not Qualified - Not Qualified
surface mount NO YES - NO - YES
Terminal form THROUGH-HOLE GULL WING - THROUGH-HOLE - GULL WING
Terminal location SINGLE SINGLE - SINGLE - SINGLE
transistor applications SWITCHING SWITCHING - SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON - SILICON
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