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IXTA3N110

Description
3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size136KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXTA3N110 Overview

3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IXTA3N110 Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage1200 V
Processing package descriptionPLASTIC, TO-263, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingPURE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current3 A
Rated avalanche energy700 mJ
Maximum drain on-resistance4.5 ohm
Maximum leakage current pulse12 A
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTA/IXTP 3N120
IXTA/IXTP 3N110
V
DSS
1200 V
1100 V
I
D25
3A
3A
R
DS(on)
4.5
4.0
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
3N120
3N110
3N120
3N110
Maximum Ratings
1200
1100
1200
1100
±20
±30
3
12
3
20
700
5
150
-55 to +150
150
-55 to +150
V
V
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Features
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
TAB = Drain
G
S
D (TAB)
D (TAB)
G
DS
TO-220 (IXTP)
TO-263 (IXTA)
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
300
1.13/10 Nm/lb.in.
4
2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
3N120
3N110
1200
1100
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
3N120
3N110
25
1
4.5
4.0
V
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
© 2003 IXYS All rights reserved
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