Bulletin I2166 rev. B 09/05
SAFE
IR
Series
8EWS..SPbF
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
Description/ Features
The 8EWS..SPbF rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The
High Reverse Voltage
range available allows
design of input stage primary rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification and
these products are designed to be used with Interna-
tional Rectifier Switches and Output Rectifiers which
are available in identical package outlines.
V
F
< 1V @ 10A
I
FSM
= 200A
V
RRM
= 800V, 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
1.2
2.5
5.5
Three-phase Bridge
1.6
2.8
6.5
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
I
FSM
V
F
T
J
@ 10A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
Values
10
800, 1200
200
1.10
- 40 to 150
TO-252AA (D-Pak)
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1
8EWS..SPbF
SAFE
IR
Series
Bulletin I2166 rev. B 09/05
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
8EWS08SPbF
8EWS12SPbF
800
1200
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1300
I
RRM
150°C
mA
0.5
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
Values
10
170
200
130
145
Units
A
A
A
2
s
A
2
√s
Conditions
@ T
C
= 105° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
1450
Electrical Specifications
Parameters
V
FM
r
t
I
RM
Max. Forward Voltage Drop
Forward slope resistance
Values
1.1
20
0.82
0.05
0.50
Units
V
mΩ
V
mA
Conditions
@ 10A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
Max. Reverse Leakage Current
V
R
= rated V
RRM
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
T
Approximate Weight
Case Style
1(0.03)
g (oz.)
TO-252AA (D-PAK)
Values
- 40 to 150
- 40 to 150
240
2.5
62
Units
°C
°C
°C
°C/W
°C/W
Conditions
DC operation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
2
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8EWS..SPbF
SAFE
IR
Series
Bulletin I2166 rev. B 09/05
Maximum Allowable Case T
emperature (°C)
Maximum Allowable Cas T
e emperature (°C)
150
140
130
8EWS
S
.. eries
R
thJC
(DC) = 2.5 °C/ W
150
140
130
8EWS
S
.. eries
R
thJC
(DC) = 2.5 °C/ W
Conduction Angle
120
110
100
90
80
0
2
4
6
8
10
Average Forwa rd Current (A)
30°
60°
90°
120°
Conduction Period
120
110
100
90
30°
60°
90°
120°
10
180°
12
14
DC
16
18
180°
12
0
2
4
6
8
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
16
14
12
10
RMS Limit
8
6
4
2
0
0
2
4
Cond uction Angle
Fig. 2 - Current Rating Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
RMSLimit
Conduction Period
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Los (W)
s
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
8EWS
S
.. eries
T
J
= 150°C
6
8
10
8EWS
S
.. eries
T = 150°C
J
Average F
orward Current (A)
Fig. 3 - Forward Power Loss Characteristics
200
Peak Half S Wave F
ine
orward Current (A)
180
160
140
120
100
80
60
40
1
10
100
Number Of E
qual Amplitude Half Cycle Current Puls (N)
es
Fig. 4 - Forward Power Loss Characteristics
240
220
Ma ximum Non R etitive Surge Current
ep
Versus Pulse T
rain Dura tion.
Initial T
J
= 150 °C
200
No Voltage R
eap plied
Rated V
RRM
R
eapplied
180
160
140
120
100
80
60
40
0.01
8EWS
S
.. eries
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8EWS
S
.. eries
Peak Half S Wave Forward Current (A)
ine
At Any R ted Load Condition And With
a
Rated V
R
ollowing Surge.
RM
Ap plied F
Initial T
J
= 150°C
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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8EWS..SPbF
SAFE
IR
Series
Bulletin I2166 rev. B 09/05
100
Insta ntaneous F
orward Current (A)
T
J
= 25°C
T
J
= 150°C
10
8EWS
S
.. eries
1
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 8 - Forward Voltage Drop Characteristics
T
rans
ient T
hermal Impedance Z
thJC
(°C/ W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
teady S
tate Value
(DC Operation)
1
S
ingle Pulse
i
0.1
0.0001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s
)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
4
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8EWS..SPbF
SAFE
IR
Series
Bulletin I2166 rev. B 09/05
Outline Table
2.38 (0.09)
6.73 (0.26)
6.35 (0.25)
5.46 (0.21)
5.21 (0.20)
4
1.27 (0.05)
0.88 (0.03)
2.19 (0.08)
1.14 (0.04)
0.89 (0.03)
0.58 (0.02)
0.46 (0.02)
6.45 (0.24)
MINIMUM RECOMMENDED FOOTPRINT
5.97 (0.24)
1.64 (0.02)
1
2
3
6.22 (0.24)
5.97 (0.23)
10.42 (0.41)
9.40 (0.37)
5.68 (0.22)
6.48 (0.26)
10.67 (0.42)
1.52 (0.06)
1.15 (0.04)
2x
1.14 (0.04)
0.76 (0.03)
2.28 (0.09)
2x
3x
0.89 (0.03)
0.64 (0.02)
1-
2-
3-
4-
Anode
Cathode
Gate
Anode
0.51 (0.02)
MIN.
0.58 (0.02)
0.46 (0.02)
2x
2.54 (0.10)
1.65 (0.06)
2x
2.28 (0.09)
2x
4.57 (0.18)
Base
Cathode
4, 2
Dimensions in millimeters and (inches)
1
3
Anode
Anode
Marking Information
PART NUMBER
8EWS12S
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 12
LINE C
THIS IS A 8EWS12S WITH
LOT CODE 5K3A
ASSEMBLED ON WW 12, 2000
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
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