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8EWS12STR

Description
10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
CategoryDiscrete semiconductor    diode   
File Size211KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

8EWS12STR Overview

10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA

8EWS12STR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompli
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current50 µA
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2166 rev. B 09/05
SAFE
IR
Series
8EWS..SPbF
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
Description/ Features
The 8EWS..SPbF rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The
High Reverse Voltage
range available allows
design of input stage primary rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification and
these products are designed to be used with Interna-
tional Rectifier Switches and Output Rectifiers which
are available in identical package outlines.
V
F
< 1V @ 10A
I
FSM
= 200A
V
RRM
= 800V, 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
1.2
2.5
5.5
Three-phase Bridge
1.6
2.8
6.5
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
I
FSM
V
F
T
J
@ 10A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
Values
10
800, 1200
200
1.10
- 40 to 150
TO-252AA (D-Pak)
www.irf.com
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