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MGF1907A

Description
TAPE CARRIER LOW NOISE GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size361KB,6 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

MGF1907A Overview

TAPE CARRIER LOW NOISE GaAs FET

MGF1907A Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Reach Compliance Codeunknow
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
FET technologyJUNCTION
highest frequency bandX BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.36 W
Minimum power gain (Gp)5 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
June/2004

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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