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N02L163WC2AT-55I

Description
Standard SRAM, 128KX16, 55ns, CMOS, PDSO44
Categorystorage    storage   
File Size92KB,10 Pages
ManufacturerNanoAmp ( ON Semiconductor )
Websitehttp://www.onsemi.cn/PowerSolutions/home.do
Download Datasheet Parametric Compare View All

N02L163WC2AT-55I Overview

Standard SRAM, 128KX16, 55ns, CMOS, PDSO44

N02L163WC2AT-55I Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNanoAmp ( ON Semiconductor )
package instructionTSOP, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of terminals44
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
Maximum standby current0.00001 A
Minimum standby current1.8 V
Maximum slew rate0.016 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Base Number Matches1
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WC2A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
The N02L163WC2A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N02L1618N1A, which is processed to
operate at lower voltages. The device operates
with two chip enable (CE1 and CE2) controls and
output enable (OE) to allow for easy memory
expansion. Byte controls (UB and LB) allow the
upper and lower bytes to be accessed
independently and can also be used to deselect
the device. The N02L163WC2A is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Product Family
Part Number
N02L163WC2AB
Package
Type
48 - BGA
Operating
Temperature
-40
o
C to +85
o
C
Power
Supply (Vcc)
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max
20
µA
4 mA @ 1MHz
N02L163WC2AT 44 - TSOP II
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
Pin Configuration
A
4
A
3
A
2
A
1
A
0
CE1
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
16
A
15
A
14
A
13
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
CE2
A
8
A
9
A
10
A
11
NC
Pin Descriptions
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
V
CC
2
OE
UB
I/O
10
I/O
11
I/O
12
3
A
0
A
3
A
5
NC
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Name
A
0
-A
16
WE
CE1, CE2
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
N02L163WC2A
TSOP
I/O
14
I/O
13
I/O
15
NC
NC
A
8
48 Pin BGA (top)
6 x 8 mm
Stock No. 23140-04 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1

N02L163WC2AT-55I Related Products

N02L163WC2AT-55I N02L163WC2AB-55I
Description Standard SRAM, 128KX16, 55ns, CMOS, PDSO44 Standard SRAM, 128KX16, 55ns, CMOS, PBGA48
Is it Rohs certified? incompatible incompatible
Maker NanoAmp ( ON Semiconductor ) NanoAmp ( ON Semiconductor )
package instruction TSOP, TSOP44,.46,32 FBGA, BGA48,6X8,30
Reach Compliance Code unknown unknown
Maximum access time 55 ns 55 ns
I/O type COMMON COMMON
JESD-30 code R-PDSO-G44 R-PBGA-B48
memory density 2097152 bit 2097152 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 16 16
Number of terminals 44 48
word count 131072 words 131072 words
character code 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 128KX16 128KX16
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP FBGA
Encapsulate equivalent code TSOP44,.46,32 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE GRID ARRAY, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
power supply 3/3.3 V 3/3.3 V
Certification status Not Qualified Not Qualified
Minimum standby current 1.8 V 1.8 V
Maximum slew rate 0.016 mA 0.016 mA
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal form GULL WING BALL
Terminal pitch 0.8 mm 0.75 mm
Terminal location DUAL BOTTOM
Base Number Matches 1 1
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