BSS 98
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...1.6 V
Pin 1
S
Type
Pin 2
G
Marking
Pin 3
D
V
DS
50 V
I
D
0.3 A
R
DS(on)
3.5
Ω
Package
BSS 98
Type
BSS 98
BSS 98
BSS 98
TO-92
SS98
Ordering Code
Q62702-S053
Q62702-S517
Q62702-S635
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
V
DS
V
DGR
50
V
50
V
GS
Gate source voltage
ESD Sensitivity as per MIL-STD 883
Continuous drain current
T
A
= 25 ˚C
±
20
Class 1
A
0.3
I
D
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
1.2
P
tot
Power dissipation
T
A
= 25 ˚C
W
0.63
Data Sheet
1
05.99
BSS 98
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
-55 ... + 150
-55 ... + 150
˚C
≤
200
E
55 / 150 / 56
K/W
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
V
(BR)DSS
V
50
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
I
DSS
1.2
1.6
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 ˚C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 ˚C
-
-
-
I
GSS
0.05
-
-
0.5
5
100
µA
nA
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.3 A
V
GS
= 4.5 V,
I
D
= 0.3 A
Ω
-
-
1.8
2.8
3.5
6
Data Sheet
2
05.99
BSS 98
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.3 A
g
fs
S
0.12
0.23
-
pF
-
40
55
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
15
25
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
5
8
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
-
t
r
5
8
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
-
t
d(off)
6
9
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
-
t
f
12
16
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
-
15
20
Data Sheet
3
05.99
BSS 98
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
A
-
-
0.3
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
-
V
SD
-
1.2
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.6 A
-
1
1.4
Data Sheet
4
05.99
BSS 98
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.32
0.70
W
0.60
A
P
tot
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
I
D
0.24
0.20
0.16
0.12
0.08
0.15
0.10
0.05
0.00
0
20
40
60
80
100
120
˚C
160
0.04
0.00
0
20
40
60
80
100
120
˚C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25˚C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
60
V
58
V
(BR)DSS
57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100
˚C
160
T
j
Data Sheet
5
05.99
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