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ZXMN6A08GTA

Description
3.8 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
CategoryDiscrete semiconductor    The transistor   
File Size432KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXMN6A08GTA Overview

3.8 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

ZXMN6A08GTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionTO-261AA, 4 PIN
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)3.8 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.080 @ VGS = 10V
0.150 @ VGS = 4.5V
I
D
(A)
5.3
2.8
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
D
G
S
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Tape width
(mm)
12
12
Quantity per
reel
1,000
4,000
Ordering information
Device
ZXMN6A08GTA
ZXMN6A08GTC
Reel size
(inches)
7
13
Pinout - top view
Device marking
ZXMN
6A08
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com

ZXMN6A08GTA Related Products

ZXMN6A08GTA ZXMN6A08G ZXMN6A08
Description 3.8 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 3.8 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 3.8 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
Number of terminals 4 4 4
surface mount YES Yes Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL pair pair
transistor applications SWITCHING switch switch
Transistor component materials SILICON silicon silicon
Minimum breakdown voltage - 60 V 60 V
Processing package description - TO-261AA, 4 PIN TO-261AA, 4 PIN
EU RoHS regulations - Yes Yes
state - ACTIVE ACTIVE
packaging shape - Rectangle Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE
terminal coating - MATTE Tin MATTE Tin
Packaging Materials - Plastic/Epoxy Plastic/Epoxy
structure - Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Channel type - N channel N channel
field effect transistor technology - Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode - ENHANCEMENT ENHANCEMENT
Transistor type - universal power supply universal power supply
Maximum leakage current - 3.8 A 3.8 A
Maximum drain on-resistance - 0.0800 ohm 0.0800 ohm
Maximum leakage current pulse - 20 A 20 A
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