PN2907 / MMBT2907
Discrete POWER & Signal
Technologies
PN2907
MMBT2907
C
E
C
BE
TO-92
SOT-23
Mark: 2B
B
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
60
5.0
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2907
625
5.0
83.3
200
Max
*MMBT2907
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©
1997 Fairchild Semiconductor Corporation
PN2907 / MMBT2907
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
B
I
CBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V
V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 150
°C
40
60
5.0
50
50
20
20
V
V
V
nA
nA
nA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
100
30
300
0.4
1.6
1.3
2.6
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
V
EB
= 2.0 V, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
2.0
8.0
30
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA , PW = 200 ns
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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