2STX2220
High Gain Low Voltage
PNP Power Transistor
General features
■
■
Very low Collector to Emitter saturation voltage
D.C. Current gain, h
FE
>100
■
1.5 A continuous collector current
■
In compliance with the 2002/93/EC European
Directive
TO-92
Description
The device in a PNP transistor manufactured
using new “PB-HDC” (Power Bipolar High Density
Current) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Internal schematic diagram
Applications
■
■
Power management in portable equipment
Switching regulator in battery charger
applications
Order codes
Part Number
2STX2220
Marking
X2220
Package
TO-92
Packing
Bulk
September 2006
Rev 2
1/11
www.st.com
11
2STX2220
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
2STX2220
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
amb
= 25°C
Storage temperature
Max. operating junction temperature
Value
-20
-20
-5
-1.5
-3
-0.1
-0.2
0.9
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
__max
__max
Value
44.6
139
Unit
°C/W
°C/W
3/11
Electrical characteristics
2STX2220
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CBO
I
EBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
=0)
Emitter cut-off current
(I
C
=0)
Test Conditions
V
CB
= -20V
V
EB
= -5V
Min.
Typ.
Max.
-0.1
-0.1
Unit
µA
µA
Collector-emitter
V
(BR)CEO (2)
breakdown voltage
(I
B
= 0)
V
(BR)EBO
V
CE(sat) (2)
Emitter-base breakdown
voltage (I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter on voltage
I
C
= -10mA
-20
V
I
E
= -100µA
I
C
= -0.5A
I
C
= -1.5A
I
C
= -0.5A
I
C
= -1.5A
I
C
= -1A
I
C
= -100mA
I
B
= -50mA
I
B
= -150mA
I
B
= -50mA
I
B
= -150mA
V
CE
= -2V
V
CE
= -2V
V
CE
= -2V
V
CE
= -2V
V
CE
= -2V
V
CB
= -10V
-5
-0.25
-0.45
-1
-1.1
-1
200
170
120
75
30
600
V
V
V
V
V
V
V
BE(sat) (2)
V
BE(on) (2)
h
FE (2)
DC current gain
I
C
= -500mA
I
C
= -1.5A
I
C
= -3A
I
E
= 0
f = 1MHz
I
C
= -1.5A
C
CBO
Collector-base
capacitance
Resistive load
Turn-on time
Turn-off time
pF
t
on
t
off
V
CC
= -10V
I
B1
= -I
B2
= -150mA
60
250
ns
ns
Note (2) Pulsed duration = 300
µs,
duty cycle
≤1.5%
4/11
2STX2220
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
DC current gain
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Base-emitter on voltage
5/11
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