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MBRB20080CTGTRR

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, PLASTIC, D2PAK,-3
CategoryDiscrete semiconductor    diode   
File Size144KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

MBRB20080CTGTRR Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, PLASTIC, D2PAK,-3

MBRB20080CTGTRR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current850 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Preliminary Data Sheet PD-20801 11/04
MBR20...CTG
MBRB20...CTG
MBR20...CTG-1
SCHOTTKY RECTIFIER
20 Amp
I
F(AV)
= 20 Amp
V
R
= 80 to 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
(Per Device)
I
FRM
@ T
C
= 133°C
(Per Leg)
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 10 Apk, T
J
= 125°C
range
20
80/90/100
850
0.70
- 65 to 150
A
V
A
V
°C
Description/ Features
Units
A
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
150° C T
J
operation
Center tap TO-220, D
2
Pak and TO-262 packages
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
20
Case Styles
MBR20...CTG
MBRB20...CTG
MBR20...CTG-1
Base
Common
Cathode
2
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
TO-220
D
2
PAK
TO-262
1

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