STC03DE170HV
Hybrid emitter switched bipolar transistor
ESBT 1700V - 3A - 0.55
Preliminary Data
General features
Table 1.
V
CS(ON)
1V
■
■
■
■
■
General features
I
C
1.8A
R
CS(ON)
0.55Ω
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1700 V
Very low C
ISS
driven by R
G
= 47
Ω
In compliance with the 2002/93/EC European
Directive
1
23
4
TO247-4L HV
Description
The STC03DE170HV is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE170HV is designed for use in aux
flyback smps for any three phase application.
Internal schematic diagrams
Applications
■
Aux SMPS for three phase mains
Order codes
Part Number
STC03DE170HV
Marking
C03DE170HV
Package
TO247-4L HV
Packing
Tube
September 2006
Rev 1
1/11
www.st.com
11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
®
STC03DE170HV
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC03DE170HV
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
GS
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-source voltage (V
BS
=V
GS
=0V)
Base-source voltage (I
C
=0, V
GS
=0V)
Source-base voltage (I
C
=0, V
GS
=0V)
Gate-source voltage
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 1ms)
Total dissipation at T
c
≤
25°C
Storage temperature
Max. operating junction temperature
Value
1700
30
9
Unit
V
V
V
V
A
A
A
A
W
°C
°C
±
20
3
6
2
4
100
-40 to 150
125
Table 3.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
max
Value
1
Unit
°C/W
3/11
Electrical characteristics
STC03DE170HV
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CS(SS)
I
BS(OS)
I
SB(OS)
I
GS(OS)
V
CS(ON)
h
FE
V
BS(ON)
V
GS(th)
C
iss
Q
GS(tot)
Electrical characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
100
10
100
500
1
1
3.5
6
5
10
1
0.8
1.5
2.2
750
1.2
1
3
V
V
V
pF
1.5
1.3
Unit
µA
µA
µA
nA
V
V
Collector-source current
V
CS(SS)
=1700V
(V
BS
=V
GS
=0V)
Base-source current
(I
C
=0, V
GS
=0V)
Source-base current
(I
C
=0, V
GS
=0V)
Gate-source leakage
(V
BS
=0V)
Collector-source ON
voltage
DC current gain
Base-source ON
voltage
Gate threshold voltage
Input capacitance
V
BS(OS)
=30V
V
SB(OS)
=9V
V
GS
=
±
20V
V
GS
=10V I
C
=1.8A I
B
=0.36A
V
GS
=10V I
C
=0.7A I
B
=70mA
V
CS
=1V
V
CS
=1V
V
GS
=10V I
C
=1.8A
V
GS
=10V I
C
=0.7A
I
B
=0.36A
I
B
=70mA
V
GS
=10V I
C
=1.8A
V
GS
=10V I
C
=0.7A
V
BS
=V
GS
V
CS
=25V
V
GS
=0V
V
CS
=15V
V
CB
=0V
V
GS
=10V
V
Clamp
=1200V
I
C
=1.8A
V
GS
=10V
V
Clamp
=1200V
I
C
=0.7A
V
CC
=V
Clamp
=400V
V
GS
=10V
I
B
= 0.1A
t
peak
=500ns
I
B
=250µA
f =1MHz
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(500ns)
V
GS
=10V
I
C
=1.8A
R
G
=47Ω
t
p
=4µs
I
B
=0.36A
R
G
=47Ω
t
p
=4µs
I
B
=70mA
I
C
=0.5A
R
G
=47Ω
I
Bpeak
=1A
12.5
nC
t
s
t
f
760
14
ns
ns
t
s
t
f
690
32
ns
ns
V
CS(dyn)
3.9
V
4/11
STC03DE170HV
Table 4.
Symbol
Electrical characteristics
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(1µs)
Test Conditions
V
CC
=V
Clamp
=400V
V
GS
=10V
I
B
= 0.1A
t
peak
=500ns
h
FE
=5
I
C
=0.5A
R
G
=47Ω
I
Bpeak
=1A
I
C
= 3A
1700
V
2.2
V
Min.
Typ.
Max.
Unit
V
CS(dyn)
V
CSW
Maximum collector-
source voltage switched R
G
=47Ω
without snubber
Note (1) Pulsed duration = 300
µs,
duty cycle
≤1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Dynamic collector-source
saturation voltage
Figure 3.
Reverse biased safe
operating area
Figure 4.
Gate threshold voltage vs
temperature
5/11
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