Excelics
DATA SHEET
180 Min.
(All Leads)
EFA080A-70
Low Distortion GaAs Power FET
44
19
4
•
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+23.5dBm TYPICAL OUTPUT POWER
7.0 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
20
D
S
S
40
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=2.0mA
-10
-6
MIN
21.5
6.0
TYP
23.5
23.5
7.0
4.5
30
130
90
210
120
-2.0
-15
-14
135
*
o
MAX
UNIT
dBm
dB
%
300
mA
mS
-3.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
8V
5V
Vds
Gate-Source Voltage
-5V
-4V
Vgs
Drain Current
Idss
185mA
Ids
Forward Gate Current
20mA
4mA
Igsf
Input Power
22dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1.1W
0.9W
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
70
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