UNISONIC TECHNOLOGIES CO., LTD
DTA123E
PNP EPITAXIAL SILICON TRANSISTOR
3
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
2
3
1
SOT-23
EQUIVALENT CIRCUIT
R1
IN
R2
OUT
2
3
1
SOT-323
2
GND
IN
GND
OUT
1
SOT-523
*Pb-free plating product number:DTA123EL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTA123E-AE3-6-R
DTA123EL-AE3-6-R
DTA123E-AL3-6-R
DTA123EL-AL3-6-R
DTA123E-AN3-6-R
DTA123EL-AN3-6-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
Tape Reel
DTA123EL-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
AC3
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-086,A
DTA123E
PARAMETER
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
RATINGS
UNIT
Supply Voltage
-50
V
Input Voltage
-12 ~ +10
V
Output Current
-100
mA
SOT-523
150
mW
Power Dissipation
P
D
SOT-23/SOT-323
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
CC
V
IN
I
OUT
ELECTRICAL SPECIFICATIONS
(Ta=25°C)
SYMBOL
V
IN(OFF)
Input Voltage
V
IN(ON)
Output Voltage
V
OUT(ON)
Input Current
I
IN
Output Current
I
OUT(OFF)
DC Current Gain
G
IN
Input Resistance
R
1
Resistance Ratio
R
2
/R
1
Transition Frequency
f
T
* Transition frequency of the device
PARAMETER
TEST CONDITIONS
V
CC
=-5V, I
OUT
=-100µA
V
OUT
=-0.3V, I
OUT
=-20mA
I
OUT
/I
IN
=10mA/-0.5mA
V
IN
=-5V
V
CC
=-50V, V
IN
=0V
V
OUT
=-5V, I
OUT
=-20mA
MIN
-3
-0.1
-0.3
-3.8
-0.5
2.86
1.2
TYP
MAX
-0.5
UNIT
V
V
mA
µA
KΩ
MHz
20
1.54
0.8
V
CE
=-10V, I
E
=−5mA, f=100MHz *
2.2
1
250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-086,A
DTA123E
TYPICAL CHARACTERISTIC
Input Voltage vs. Output Current
(ON Characteristics)
100
50
Input Voltage, V
IN (ON)
(V)
PNP EPITAXIAL SILICON TRANSISTOR
Output Current vs. Input Voltage
(OFF Characteristics)
10m
5m
2m
1m
Output Current, I
OUT
(A)
V
OUT
=-0.3V
V
CC
=-5V
20
10
5
2
1
500m
200m
100m
-100μ-200μ -500μ
-1m -2m -5m -10m -20m -50m -100m
Ta=-40℃
25℃
100℃
500μ
200μ
100μ
50μ
20μ
10μ
5μ
2μ
1μ
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Ta=100℃
25℃
-40℃
Output Current, I
OUT
(A)
Input Voltage, V
I(OFF)
(V)
DC Current Gain vs. Output Current
1K
500
200
V
OUT
=-5V
1
500m
200m
Ta=100℃
25℃
-40℃
Output Voltage vs. Output Current
l
OUT
/l
IN
=20
DC Current Gain, G
I
Output Voltage, V
OUT(ON)
(V)
100
50
20
10
5
2
1
- 100μ-200
μ
-500
μ
-1 m
-2m -5m -10m -20m - 50m -100m
100m
50m
20m
10m
5m
2m
1m
- 100μ-200
μ
-500
μ
-1 m
-2m -5m -10m -20m - 50m -100m
Ta=100℃
25℃
-40℃
Output Current, I
OUT
(A)
Output Current, I
OUT
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R206-086,A
TI Technology Forum
京公网安备 11010802033920号
EEWORLD
