UNISONIC TECHNOLOGIES CO., LTD
DTC144T
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
NPN SILICON TRANSISTOR
3
2
3
1
SOT-23
2
3
1
SOT-323
EQUIVALENT CIRCUIT
2
B
R
1
C
1
SOT-523
*Pb-free plating product number:DTC144TL
E
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTC144T-AE3-R
DTC144TL-AE3-R
DTC144T-AL3-R
DTC144TL-AL3-R
DTC144T-AN3-R
DTC144TL-AN3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
DTC144TL-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
CE4T
For SOT -23/SOT-323 Package
C9T
For SOT-523 Package
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-066,B
DTC144T
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
RATING
UNIT
Collector-Base Voltage
50
V
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
V
Collector Current
100
mA
SOT-523
150
mW
Collector Power Dissipation
P
C
SOT-23/SOT-323
200
mW
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
R1
f
T
TEST CONDITIONS
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
I
C
=5mA, I
B
=0.5mA
V
CE
=5V, I
C
=1mA
V
CE
=10V, I
E
=-5mA, f=100MHz*
MIN
50
50
5
TYP
MAX UNIT
V
V
V
0.5
µA
0.5
µA
0.3
V
600
61.1
kΩ
MHz
100
32.9
250
47
250
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www.unisonic.com.tw
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QW-R206-066,B
DTC144T
■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
1k
500
Collector Saturation Voltage, V
CE(SAT)
(mV)
Collector Saturation Voltage vs. Collector
Current
1000
500
200
100
50
20
10
5
2
1
0.1
V
CE
=5V
Ic/I
B
=10
DC Current Gain,
h
FE
200
100
50
20
10
5
2
1
0.1
Ta=100℃
25℃
-40℃
Ta=100℃
25℃
-40℃
0.2
0.5 1
2
5
10
20
50
100
0.2
0.5
1
2
5
10
20
50
100
Collector Current, Ic (mA)
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-066,B
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