UNISONIC TECHNOLOGIES CO., LTD
MMBTA56
AMPLIFIER TRANSISTOR
FEATURES
3
* Collector-Emitter Voltage: V
CEO
=-80V
* Collector Dissipation: P
D
=350mW
PNP SILICON TRANSISTOR
1
2
SOT-23
*Pb-free plating product number: MMBTA56L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTA56-AE3-R
MMBTA56L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBTA56L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
2G
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-090,A
MMBTA56
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation(Note 1)
P
D
Derate Above 25℃
Junction Temperature
T
J
Storage Temperature
T
STG
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
-80
-80
-4
-500
350
2.8
+150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/℃
℃
℃
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
θ
JA
MAX
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
TEST CONDITIONS
I
C
=-1.0mA, I
B
=0
I
E
=-100µA, Ic=0
V
CE
=-60V, I
B
=0
V
CB
=-80V, I
E
=0
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, V
CE
=-1V
MIN
-80
-4
-0.1
-0.1
100
100
-0.25
-1.2
100
V
V
MHz
TYP
MAX
UNIT
V
V
µA
µA
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter on Voltage
V
BE(ON)
SMALL-SIGNAL CHARACTERISTICS
I
C
=-10mA, V
CE
=-2V,
Current Gain Bandwidth Product
f
T
(Note2)
f=100MHz
Note 1: Pulse test: PW≤300µs, Duty Cycle≤2%
2: f
T
is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
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MMBTA56
SWITCHING TIME TEST CIRCUITS
PNP SILICON TRANSISTOR
TURN-ON TIME
V
CC
-1.0V
+40V
100
5 .0µs
TURN-OFF TIME
V
CC
+V
BB
+40V
OUTPUT
C
S
＜6.0pF
100
V
IN
5.0µs
R
L
R
L
OUTPUT
C
S
＜6.0pF
V
IN
5.0µF
R
B
100
R
B
100
t
r
=3.0ns
5.0µF
+10V
0
t
r
=3.0ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBTA56
TYPICAL CHARACTERISTICS
200
Current-Gain Bandwidth
Product, f
T
(MHz)
PNP SILICON TRANSISTOR
Current -Gain Bandwidth Product
100
70
Capacitance
T
J
=25℃
C
ibo
Capacitance, C (pF)
100
70
50
30
V
CE
=-2.0V
T
J
=25℃
50
30
20
C
obo
10
7.0
5.0
-0.1-0.2 -0.5-10 -20 -5.0-10 -20 -50 -100
Reverse Voltage, V
R
(V)
20
-2.0-3.0 -5.0 -7.0-10 -20-30 -50-70-100 -200
Collector Current, I
C
(mA)
1.0K
700
500
Switching Time
Active-Region Safe Operating Area
-1.0K
-700
-500
Collector Current, I
C
(mA)
1.0ms
T
C
=25℃
s
0µ
10
Time, t (ns)
300
200
100
70
50
t
s
-300
-200
1.0s
t
f
V
CC
=-40V
30 I
C
/I
B
=10
t
r
20 I
B1
=I
B2
T =25℃ t
d
@V
BE(off )
=-0.5V
10
J
-5.0-7.0 -10 -20 -30-50-70-100-200-300-500
Collector Current I
C
(mA)
,
-100 T
A
=25℃
-70
-50
MMBTA55
-30
-20
MMBTA56
Current Limit
Thermal Limit
Second Breakdown Limit
-10
-1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100
Collector-Emitter Voltage, V
CE
(V)
DC Current Gain
400
T
J
=125℃
V
CE
=-1.0V
-1.0
-0.8
Voltage, V
25℃
-55℃
-0.6
“ON”
Voltages
T
J
=125℃
V
BE(SAT )
@I
C
/I
B
=10
DC Current Gain, h
FE
200
V
BE(ON)
@V
CE
=-1.0V
-0.4
-0.2
V
CE(SAT)
@I
C
/I
B
=10
100
80
60
40
-0.5 -1.0-2.0 -5.0-10 -20 -50 -100-200 -500
Collector Current I
C
(mA)
,
0
-0.5 -1.0-2.0 -5.0 -10 -20 -50 -100-200-500
Collector Current, I
C
(mA)
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www.unisonic.com.tw
4 of 5
QW-R206-090,A
MMBTA56
TYPICAL CHARACTERISTICS(Cont.)
Collector Saturation Region
Collector-Emitter Voltage, V
CE
(V)
Temperature Coefficient, R
θVB
(mV/℃)
PNP SILICON TRANSISTOR
-1.0
-0.8
-0.6
-0.4
-0.2
I
C
=-50
mA
I
C
=-
T
J
=125℃
250mA
-0.8
-1.2
-1.6
Base-Emitter Temperature
Coefficient
I
C
=-500
mA
R
θVB
for V
BE
-2.0
-2.4
-2.8
-0.5 -1.0-2.0 -5.0 -10-20 -50-100-200 -500
Collector Current, I
C
(mA)
I
C
=
-100mA
0 I
C
=-10mA
-0.05 -0.1-0.2 -0.5-1.0-2.0-5.0 -10 -20 -50
Base Current, I
B
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-090,A
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