UNISONIC TECHNOLOGIES CO., LTD
UF730
5.5A, 400V, 1.0 OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
The UF730 power MOSFET is designed for high voltage, high
speed power switching applications such as switching power
suppliess, switching adaptors.
MOSFET
1
TO-220
FEATURES
* 5.5A, 400V, Low R
DS(ON)
(1.0Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching
1
TO-220F
*Pb-free plating product number: UF730L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
UF730-TA3-T
UF730L-TA3-T
TO-220
UF730-TF3-T
UF730L-TF3-T
TO-220F
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE
UF730L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2005 Unisonic Technologies Co., Ltd.
1 of 6
QW-R502-077,A
UF730
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (T
J
=25℃~125℃)
Drain to Gate Voltage (R
GS
= 20kΩ) (T
J
=25℃~125℃)
Gate to Source Voltage
Continuous
T
C
= 100℃
Drain Current
Pulsed
Maximum Power Dissipation
Derating above 25℃
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
RATINGS
400
400
±20
6.5
3.5
22
93
0.6
MOSFET
UNIT
V
V
V
A
A
A
W
W/℃
Single Pulse Avalanche Energy Rating
300
mJ
E
AS
(V
DD
=50V, starting T
J
=25℃, L=17mH, R
G
=25Ω, peak I
AS
= 5.5A)
Operating Temperature Range
T
OPR
-55 ~ +150
℃
Storage Temperature Range
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θ
JA
θ
Jc
RATINGS
80
1.67
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL
BV
DSS
V
GS(THR)
I
D(ON)
I
DSS
I
GSS
R
DS(ON)
g
FS
t
DLY(ON)
t
R
t
DLY(OFF)
t
F
Q
G(TOT)
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)MAX
,
V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V, T
J
= 125℃
V
GS
= ±20V
I
D
= 3.0A, V
GS
= 10V
V
DS
≥
10V, I
D
= 3.3A
V
DD
= 200V, I
D
≈
5.5A,
R
GS
= 12Ω, R
L
= 35Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 5.5A,
V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= 25V, V
GS
= 0V,f = 1MHz
2.9
MIN TYP MAX UNIT
400
2.0
5.5
25
250
±100
0.8
4.4
10
20
35
15
20
3.0
10
600
150
40
17
29
56
24
35
1.0
4.0
V
V
A
µA
µA
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
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2 of 6
QW-R502-077,A
UF730
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
T
J
= 25℃, I
SD
= 5.5A, V
GS
= 0V
Source to Drain Diode Voltage
V
SD
(Note 1)
Continuous Source to Drain
I
S
Current
Pulse Source to Drain Current
I
SM
(Note 2)
T
J
= 25℃, I
SD
= 5.5A,
Reverse Recovery Time
t
RR
dI
SD
/dt = 100A/µs
T
J
= 25℃, I
SD
= 5.5A,
Reverse Recovery Charge
Q
RR
dI
SD
/dt = 100A/µs
Notes: 1. Pulse Test: Pulse width≤≤300µs, Duty Cycle≤≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. V
DD
= 50V, starting T
J
= 25℃, L = 17mH, R
G
= 25Ω, peak I
AS
= 5.5A.
MOSFET
1.6
5.5
22
140
0.93
300
2.1
660
4.3
V
A
A
ns
µC
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QW-R502-077,A
UF730
TEST CIRCUITS AND WAVEFORMS
V
DS
L
BV
DSS
MOSFET
R
G
D.U.T.
V
DD
I
AS
V
DS
V
DD
0.01Ω
I
AS
Figure 1A. Unclamped Energy Test Circuit
0
t
p
t
AV
Figure 1B. Unclamped Energy Waveforms
V
DS
R
L
90%
10%
90%
R
G
V
DD
V
GS
D.U.T.
0
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Figure 2A. Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Figure 2B. Resistive Switching Waveforms
CURRENT
REGULATOR
12V
BATTERY
50kΩ
0.2µF
0.3µF
D
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
V
DD
Q
G(TOT)
Q
GS
Q
GD
V
GS
V
DS
G
0
I
G(REF)
I
G
CURRENT
SAMPLING
RESISTOR
S
I
D
CURRENT
SAMPLING
RESISTOR
DUT
0
I
G(REF)
0
Figure 3A. Gate Charge Test Circuit
Figure 3B. Gate Charge Waveforms
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4 of 6
QW-R502-077,A
UF730
TYPICAL PERFORMANCE CUVES
(Unless Otherwise Specified)
Forward Bias Safe Operating Area
100
MOSFET
Maximum Contionuous Drain Current vs. Case
Temperature
6
Drain Current, I
D
(A)
Operation in This Area
is Limited by R
DS(on)
10μs
Drain Current, I
D
(A)
10
100μs
1ms
4
1
T
C
=25℃
T
J
=Max Rated
Single Pulse
1
10
100
Drain to Source Voltage, V
DS
(V)
10ms
DC
1000
2
0.1
0
25
50
75
100
125
150
Case Temperature, T
C
(℃)
Output Characteristics
10
8
6
4
V
GS
=5.0V
2
0
V
GS
=4.5V
V
GS
=4.0V
0
40
80
120
160
200
Drain to Source Voltage, V
DS
(V)
V
GS
=10
V
GS
=6.0V
Pulse Duration=80μs
Duty Cycle = 0.5% Max
Drain Current, I
D
(A)
Sturation Characteristics
10
8
6
V
GS
=5.5V
4
2
0
V
GS
=5.0V
V
GS
=4.5V
V
GS
=4.0V
0
40
80
120
160
200
Pulse Duration=80μs V
GS
=10V
Duty Cycle = 0.5% Max
Drain Current, I
D
(A)
V
GS
=6.0V
V
GS
=5.5V
Drain to Source Voltage, V
DS
(V)
Transfer Characteristics
10
Drain to Source on Resistance, R
DS (DN)
(Ω)
Drain to Source on Resistance vs. Gate Voltage and
Drain Current
10
8
6
4
V
GS
=20V
2
0
Pulse Duration
=80μs
Duty Cycle = 0.5% Max
V
GS
=10V
Drain Current, I
DR
(A)
1
T
J
=150℃
T
J
=25℃
0.1
V
DS
≥
50V
Pulse Duration=80μs
Duty Cycle = 0.5% Max
0
2
4
6
8
10
0.01
0
3
6
9
12
15
Gate to Source Voltage, V
GS
(V)
Drain Current, I
D
(A)
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QW-R502-077,A
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