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2SA1627A

Description
PNP EPITAXIAL SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size94KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SA1627A Overview

PNP EPITAXIAL SILICON TRANSISTOR

2SA1627A Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)28 MHz
Maximum off time (toff)5500 ns
Maximum opening time (tons)500 ns
Base Number Matches1
UTC 2SA1627A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627A is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
1
TO-126C
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
*
1
: PW≦10ms,Duty Cycle≦50%
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
Ic
Icp *
T
j
T
STG
1
VALUE
-600
-600
-7.0
1.0
-1.0
-2.0
150
-55 to +150
UNIT
V
V
V
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
SYMBOL
I
CBO
I
EBO
h
FE1
*
h
FE2
*
2
2
2
TEST CONDITIONS
V
CB
= -600V,I
E
=0
V
EB
= -7.0V,Ic=0
V
CE
= -5.0V,Ic= -0.1A
V
CE
= -5.0V,Ic= -0.5A
Ic= -0.3A,I
B
= -0.06A
Ic= -0.3A,I
B
= -0.06A
V
CE
= -10V, I
E
=0.1A
MIN
TYP
MAX
-10
-10
UNIT
µA
µA
30
4
58
19
-0.28
-0.85
120
-1.5
-1.2
V
V
MHz
V
CE
(sat)*
f
T
V
BE
(sat)*
2
10
28
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R217-004,A

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