UNISONIC TECHNOLOGIES CO., LTD
2SA2016
PNP EPITAXIAL PLANAR
TRANSISTOR
APPLICATIONS
* Relay drivers, lamp drivers, motor drivers, strobes.
1
PNP PLANAR TRANSISTOR
FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching
*High allowable power dissipation.
SOT-89
*Pb-free plating product number: 2SA2016L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SA2016-AB3-R
2SA2016L-AB3-R
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
2SA2016L-AB3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AB3: SOT-89
(3) L: Lead Free Plating Blank: Pb/Sn
,
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 6
QW-R208-018.B
2SA2016
ABSOLUTE MAXIMUM RATINGS
(Ta=25°С)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
PNP PLANAR TRANSISTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation Mounted on a ceramic board
Pc
1.3
W
2
(250mm *0.8mm)
Collector Dissipation (Tc=25
°
C)
Pc
3.5
W
Collector Current
Ic
-7
A
Collector Current
Icp
-10
A
Base Current
I
B
-1.2
A
Junction Temperature
T
J
150
°
C
Storage Temperature
T
STG
-55 to +150
°
C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
-50
-50
-6
UNIT
V
V
V
ELECTRICAL CHARACTERISTICS
(Tc=25
℃
)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to- Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
Cob
t
ON
t
STG
t
F
TEST CONDITIONS
Ic= -10µA, I
E
=0
Ic= -1mA, R
BE
=∞
Ic=0, I
E
= -10µA
V
CB
= -40V, I
E
=0
V
EB
= -4V, Ic=0
V
CE
= -2V, Ic= -500mA
Ic= -3.5A, I
B
= -175mA
Ic= -2A, I
B
= -40mA
Ic= -2A, I
B
= -40mA
V
CE
= -10V, Ic= -500mA
V
CB
= -10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
MIN
-50
-50
-6
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
560
-0.23 -0.39
V
-0.24 -0.40
V
-0.83 -1.2
V
290
MHz
50
pF
40
ns
225
ns
25
ns
TYP
200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R208-018.B
2SA2016
SWITCHING TIME TEST CIRCUIT
PW=20μs
D.C.≒1%
I
B2
I
B1
V
R
R
B
+
+
OUTPUT
R
L
PNP PLANAR TRANSISTOR
INPUT
50Ω
100μF
470μF
V
BE
=5V
V
CC
= -25V
-20I
B1
=20I
B2
=I
C
= 2.5A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R208-018.B
2SA2016
TYPICAL CHARACTERISTICS
PNP PLANAR TRANSISTOR
V
CE(SAT )
-Ic
-10000
7 I
C
/I
B
=50
5
3
2
-1000
7
5
3
2
-100
7
5
3
2
-10
-0.01
-10000
7
5
V
BE(SAT)
-Ic
I
C
/I
B
=50
Base-to-Emitter Saturation
Voltage,V
BE(SAT)
-V
Collector-to-Emitter Saturation
Voltage,V
CE (SAT)
-mV
Ta =75℃
Ta =25℃
3
2
Ta =-25℃
-1000
7
5
3
2
-100
-0.01
Ta =25℃
Ta =-25℃
Ta =75℃
2
3 5 7 -0.1
2 3 5 7 -1.0
2 3 5 7 -10
2
3 5 7 -0.1
2 3 5 7 -1.0
2 3 5 7 -10
Collector Current,Ic -A
Cob-V
CB
5
3
2
1000
f=1MHz
7
5
Collector Current,Ic -A
fT -Ic
V
CE
= -10V
Gain-Bandwidth Product,fT-MHz
Output Capacitance,Cob-pF
100
7
5
3
2
10
7
5
3
2
5 7-0.01
2 3 5 7 -0.1
2 3 5 7 -1.0
2 3 5
3
2
100
7
5
3
2
10
5 7-0.01 2 3 5 7 -0.1
2 3 5 7 -1.0
2 3 5 7 -10
Collector-to-Base Voltage,V
CB
-V
2
-10
7
5
3
2
-1.0
7
5
3
2
-0.1
7
5
ASO
2.0
Icp = -10A
Collector Current,Ic -A
Pc -Ta
0
μ
10
s
1m
I
C
= -7A
DC
Op
er
at
io
s
Collector Dissipation,Pc -W
s
μ
50
1.5
1.3
1.0
Collector Current,Ic -A
Mo
un
ted
n
on
a
100ms
10ms
0.5
3
2 Tc = 25℃
-0.01
2 3 5 7 -10 2 3 5 7 -100
-0.1 2 3 5 7 -1.0
Collector-to-Emitter Voltage,V
CE
-V
ce
ram
ic
bo
ard
(2
50
mm
2
* 0.
8m
m)
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R208-018.B
2SA2016
TYPICAL CHARACTERISTICS(Cont.)
PNP PLANAR TRANSISTOR
Ic-V
CE
-7
-6
Collector Current Ic -A
-90mA
-40mA
-30mA
-20mA
-10mA
Collector Current ,Ic -A
-5
-50mA
-60mA
-70mA
-80mA
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-0.2
Ic-V
BE
V
CE
= -2V
-4 -100mA
-3
-2
-1
0
0
Ta =75℃
Ta =25℃
Ta =-25℃
I
B
=0
-0.4
-0.8
-1.2
-1.6
-2.0
Collector -to-Emitter Voltage,V
CE
-V
-0.4
-0.6
-0.8
-1.0 -1.2
Base-to-Emitter Voltage,V
BE
-V
-1.4
h
FE
-Ic
1000
7
5
DC Current Gain, h
FE
V
CE
= -2V
Ta =75℃
3
2
100
7
5
3
2
Ta =25℃
Collector-to-Emitter Saturation
Voltage, V
CE(SAT)
-mV
-1000
7 I
C
/I
B
=20
5
3
2
-100
7
5
3
2
V
CE(SAT)
-Ic
Ta =-25℃
Ta =75℃
Ta =25℃
10
-0.01 2 3 5 7-0.1 2 3 5 7 -1.0
Collector Current,Ic -A
2 3 5 7 -10
Ta =-25℃
-10
7
5
3
2
-1.0
-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0
Collector Current,Ic -A
2 3 5 7 -10
4.0
3.5
Collector Dissipation,Pc -W
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
Pc -Tc
60
80 100 120
Case Temperature, Tc-℃
140
160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R208-018.B
京公网安备 11010802033920号
EEWORLD
