UNISONIC TECHNOLOGIES CO., LTD
2SB1260
POWER TRANSISTOR
PNP SILICON TRANSISTOR
1
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon
transistor.
SOT-89
FEATURES
*High breakdown voltage and high current.
BV
CEO
= -80V, I
C
= -1A
*Good h
FE
linearity.
*Low V
CE(SAT)
1
TO-252
*Pb-free plating product number: 2SB1260L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB1260-x-AB3-R
2SB1260L-x-AB3-R
2SB1260-x-TN3-R
2SB1260L-x-TN3-R
2SB1260-x-TN3-T
2SB1260L-x-TN3-T
Package
SOT-89
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Tube
2SB1260L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, TN3: TO-252
(3) refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R208-017,C
2SB1260
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
(
single pulse, Pw=100ms)
DC Collector Current
Power Dissipation
SOT-89
TO-252
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
PNP SILICON TRANSISTOR
RATINGS
-80
-80
-5
-2
-1
0.5
1.9
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
℃
℃
Operating Temperature
T
J
Storage Temperature
T
STG
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm
2
or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Collector Base Breakdown Voltage
BV
CBO
Collector Emitter Breakdown Voltage
BV
CEO
Emitter Base Breakdown Voltage
BV
EBO
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain(Note 1)
h
FE
Collector-Emitter Saturation Voltage
V
CE(SAT)
Transition Frequency
f
T
Output Capacitance
Cob
Note 1: Pulse test: P
W
<300µs, Duty Cycle<2%
TEST CONDITIONS
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
OUT
=-0.1A
I
C
=-500mA, I
B
=-50mA
V
CE
= -5V, I
E
=50mA, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-80
-80
-5
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
82
100
25
-1
-1
390
-0.4
CLASSIFICATION OF h
FE
RANK
RANGE
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
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www.unisonic.com.tw
2 of 4
QW-R208-017,C
2SB1260
■
TYPICAL CHARACTERICS
Grounded Emitter Propagation
Characteristics
-1000
V
CE
= -5V
-1.0
PNP SILICON TRANSISTOR
Grounded Emitter Output
Characteristics
Ta=25℃
-0.45mA
-0.8
-0.6
-0.4
-0.2
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
Collector Current, Ic(mA)
-100
-10
-1
Collector Current, Ic(mA)
Ta=25℃
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, V
BE
(V)
I
B
=0mA
0
0 -0.2 -0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0
Collector to Emitter Voltage, V
CE
(V)
1000
500
Ta=25℃
Collector Saturation Voltage, V
CE(SAT)
( V)
DC Current Gain vs. Collector
Current
Collector-emitter Saturation Voltage
vs. Collector Current
Ta=25℃
-2
-1
-0.5
-0.2
-0.1
-0.05
Ic/I
B
=20
10
DC Current Gain, h
FE
200
Vc
E
= -3V
100
50
Vc
E
= -1V
20
10
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
-0.02
-0.01
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
Gain Bandwidth Product vs. Emitter
Current
1000
Collector Output Capacitance, Cob (pF)
Transition Frequency, f
T
(MHz)
500
200
100
50
20
10
5
2
1
1
Ta=25℃
V
CE
= -5V
1000
500
200
100
50
20
10
5
Collector Output Capacitance vs.
Collector -Base Voltage
Ta=25℃
f=1MHz
I
E
=0A
2
5 10 20 50 100200 5001000
Emitter Current, I
E
(mA)
2
1
-0.1 -0.2 -0.5-1 -2
-5 -10 -20 -50 -100
Collector to Base Voltage, V
CB
(V)
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QW-R208-017,C
2SB1260
TYPICAL CHARACTERICS(Cont.)
Emitter Input Capacitance vs. Emitter-
Base Voltage
Ta=25℃
f=1MHz
I
c
=0A
-2
-1
PNP SILICON TRANSISTOR
Safe Operating Area
1000
Emitter Input Capacitance, Cib (pF)
500
=1
PW
Collector Current, Ic (A)
0m
200
100
50
-0.5
-0.2
PW
s
=1
0
0m
s
DC
-0.1
20
-0.1
-0.2
-0.5 -1
-2
-5
-10
-0.05
Ta=25℃
*Single pulse
-1 -2
-5
-10 -20
-50 -100
-0.5
Emitter To Base Voltage, V
EB
(V)
Collector to Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-017,C
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