MGFS48B2122 datasheet, PDF - EEWORLD Datasheet

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MGFS48B2122: Description2.11 - 2.17 GHz BAND 60W GaAs FET; CategoryDiscrete semiconductor The transistor; File Size224KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFS48B2122 Overview

2.11 - 2.17 GHz BAND 60W GaAs FET

MGFS48B2122 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	2 A
FET technology	JUNCTION
highest frequency band	S BAND
JESD-30 code	R-CDFM-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS48B2122

2.11 - 2.17 GHz BAND 60W GaAs FET

'(6&5,37,21

OUTLINE

The MGFS48B2122 is a 60W push-pull type GaAs Power FET

especially designed for use in 2.11 - 2.17GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees

high reliability.

)($785(6

Push-pull configuration

High output power

Pout = 60W (TYP.) @ f=2.17 GHz

High power gain

GLP = 12 dB (TYP.) @ f=2.17GHz

High power added efficiency

$33/,&$7,21

P.A.E. = 48 % (TYP.) @ f=2.17GHz

48$/,7<*5$'(

ICVG

UQWTEG

FTCKP

5(&200(1'('%,$6&21',7,216

VDS = 12 (V)

ID = 2.0 (A)

RG=20 (ohm) for each gate

$%62/87(0$;,0805$7,1*6

WPKVOO

(Ta=25deg.C)

Unit

deg.C

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

Symbol

VGDO

VGSO

PT *1

Tch

Tstg

Parameter

Gate to drain voltage

Gate to source voltage

Total power dissipation

Channel temperature

Storage temperature

Ratings

-20

-10

125

175

-65 / +175

*1 : Tc=25deg.C

(/(&75,&$/&+$5$&7(5,67,&6

(Ta=25deg.C)

Symbol

GLP

Pout

ID(RF)

P.A.E.

Rth (ch-c)

Parameter

Linear power gain

Output power

Drain current

Power added efficiency

Thermal resistance

Test conditions

Min.

Pin=22dBm

VDS=12V, ID(RF off)=2.0A

Pin=39dBm

f=2.17GHz

Channel to Case

Limits

Typ.

Max.

1.2

2.11-2.17GHz band power amplifier for W-CDMA Base Station

Unit

dBm

deg.C/W

MITSUBISHI

ELECTRIC

June-'04

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