UNISONIC TECHNOLOGIES CO., LTD
PZT2222A
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
NPN SILICON TRANSISTOR
1
SOT-223
*Pb-free plating product number: PZT2222AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
PZT2222A-AA3-R
PZT2222AL-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
PZT2222AL-AA3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AA3: SOT-223
(3) L: Lead Free Plating, Blank: Pb/Sn
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1 of 6
QW-R207-001,B
PZT2222A
PARAMETER
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
0.6
A
Total Device Dissipation
P
C
1
W
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
(Ta=25℃, unless otherwise noted)
PARAMETER
Thermal resistance, junction to Ambient
SYMBOL
θ
JA
RATINGS
125
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Base Cut-Off Current
ON CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CBO
I
EBO
I
BL
TEST CONDITIONS
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CE
=60V, V
EB(OFF)
=3.0V
V
CB
=60V, I
E
=0
V
CB
=60V,I
E
=0, Ta=150℃
V
EB
=3.0V, I
C
=0
V
CE
=60V, V
EB(OFF)
=3.0V
I
C
=0.1mA, V
CE
=10V
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=10mA, V
CE
=10V, Ta=-55℃
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1.0V*
I
C
=500mA, V
CE
=10V*
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=20V, f=100MHz
V
CB
=10V, I
E
=0, f=100kHz
V
EB
=0.5V, I
C
=0, f=100kHz
I
C
=20mA, V
CB
=20V, f=31.8MHz
I
C
=100µA, V
CE
=10V, R
S
=1.0kΩ,
f=1.0kHz
MIN
75
40
6
10
0.01
10
10
20
35
50
75
35
100
50
40
TYP
MAX
UNIT
V
V
V
nA
µA
µA
nA
nA
DC Current Gain
h
FE
300
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter High
Frequency Input Impedance
V
CE(SAT)
V
BE(SAT)
f
T
Cobo
Cibo
rb'Cc
NF
0.6
0.3
1.0
1.2
2.0
V
V
V
V
MHz
pF
pF
pS
dB
Ω
300
8.0
25
150
4.0
60
Re(hje) I
C
=20mA, V
CB
=20V, f=300MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R207-001,B
PZT2222A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Delay time
t
D
V
CC
=30V, V
BE(OFF)
=0.5V,
Rise time
t
R
I
C
=150mA, I
B1
=15mA
Storage time
t
S
V
CC
=30V, I
C
=150mA,
Fall time
t
F
I
B1
= I
B2
=15mA
*Pulse test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
MIN
TYP
MAX
10
25
225
60
UNIT
ns
ns
ns
ns
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3 of 6
QW-R207-001,B
PZT2222A
TEST CIRCUIT
30V
200Ω
NPN SILICON TRANSISTOR
-15V
1k
6.0V
37Ω
16V
0
≤220ns
30V
1.0KΩ
0
≤
220ns
1.0KΩ
50Ω
500Ω
Fig 1. Saturated Turn-On Switching Time
Fig 2. Saturated Turn-Off Switching Time
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4 of 6
QW-R207-001,B
PZT2222A
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
500
V
CE
=5V
DC Current Gain, h
FE
Collector-Emitter Voltage, V
CE(SAT)
(V)
DC Current Gain
vs. Collector Current
Collector-Emitter Saturation Voltage
vs. Collector Current
0.4
β=10
0.3
125℃
0.2
25℃
0.1
-40℃
1
10
100
Collector Current, I
C
(mA)
500
400
300
200
100
125℃
25℃
-40℃
3 10 30 100 300
1
Collector Current, I
C
(mA)
0
0.1 0.3
Base-Emitter On Voltage, V
BE(ON)
(V)
Base-Emitter Saturation Voltage
vs. Collector Current
Base-Emitter Voltage, V
BE(SAT)
(V)
Base-Emitter On Voltage
vs. Collector Current
1
V
CE
=5V
-40℃
25℃
0.6
125℃
0.4
0.2
0.1
1
β=10
-40℃
0.8
0.8
25℃
0.6
125℃
0.4
1
500
10
100
Collector Current, I
C
(mA)
1
10
Collector Current, I
C
(mA)
25
500
Col lector Current, I
CBO
(nA)
Collector-Cutoff Current
vs. Ambient Temperature
Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
20
f=1MHz
100
10
1
0.1
25
50
75
100
125
150
Capacitance (pF)
V
CB
=40V
16
12
8
4
0.1
C
ob
C
te
Ambient Temperature, T
A
(℃)
1
10
Reverse Bias Voltage (V)
100
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QW-R207-001,B
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