UNISONIC TECHNOLOGIES CO.,LTD.
PN2907A
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC
PN2907A
is designed for use as a general purpose
amplifier and switch requiring collector currents to 500 mA.
PNP EPITAXIAL SILICON TRANSISTOR
1
TO-92
* Pb-free plating product number: PN2907AL
PIN CONFIGURATION
PIN NO.
PIN NAME
1
Emitter
2
Base
3
Collector
ORDERING INFORMATION
Order Number
Normal
Lead free
PN2907A-T92-B PN2907AL-T92-B
PN2907A-T92-K PN2907AL-T92-K
Package
TO-92
TO-92
Packing
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD.
1
QW-R201-041.B
PN2907A
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Note 1) (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V
CEO
60
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current-Continuous
I
C
800
mA
625
mW
Power Dissipation
P
D
5.0
mW/°C
Derate above 25°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
Note 3: All voltage (V) and currents (V) are negative polarity for PNP transistors.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
Ic=0.1mA, V
CE
=10V
Ic=1.0 mA, V
CE
=10V
Ic=10 mA, V
CE
=10V
Ic=150 mA, V
CE
=10V*
Ic=500 mA, V
CE
=10V*
Ic=150mA, I
B
=15mA
Ic=500mA, I
B
=50mA
Ic=150mA, I
B
=15mA*
Ic=500mA, I
B
=50mA
75
100
100
100
50
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
B
I
CEX
I
CBO
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=10µA, I
E
=0
I
E
=10µA , I
C
=0
V
CB
=30V, V
EB
=0.5V
V
CE
=30V, V
BE
=0.5V
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, T
a
=150°C
MIN
60
60
5
50
50
0.02
20
TYP
MAX
UNIT
V
V
V
nA
nA
µA
µA
DC Current Gain
h
FE
300
0.4
1.6
1.3
2.6
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
f
T
Ic=50mA, V
CE
=20V, f=100MHz
Output Capacitance
C
obo
V
CB
=10V, I
E
=0, f=100kHz
Input Capacitance
C
ibo
V
EB
=2V, I
C
=0, f=100kHz
SWITCHING CHARACTERISTICS
Turn-on Time
t
ON
Vcc=30V, Ic=150mA
Delay Time
t
DLY
I
B1
=15mA
Rise Time
t
R
Turn-off Time
t
OFF
Vcc=6V, Ic=150mA
Storage Time
t
S
I
B1
=I
B2
=15mA
Fall Time
t
F
* Pulse Test: Pulse Width
≤
300ms, Duty Cycle≤2.0%
Note: All voltages (V) and currents (A) are negative polarity for PNP transistors
200
8
30
45
10
40
100
80
30
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2
QW-R201-041.B
PN2907A
THERMAL DATA
PARAMETER
Thermal Resistance Junction- Ambient
Thermal Resistance Junction- Case
SYMBOL
PNP EPITAXIAL SILICON TRANSISTOR
Θ
JA
Θ
Jc
RATINGS
200
83.3
UNIT
°C/W
TEST CIRCUIT
-30V
200Ω
1.0kΩ
0
-16V
50Ω
≤200ns
Fig. 1 Saturated Turn-On Switching Time Test Circuit
1.5V
-6.0V
NOTE: BV
EBO
=5.0V
1.0kΩ
0
-30V
50Ω
1kΩ
37Ω
≤200ns
Fig. 2 Saturated Turn-Off Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-041.B
PN2907A
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current
TYPICAL PULSED CURRENT GAIN,
h
FE
PNP EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage
vs Collector Current
COLLECTOR EMITTER VOLTAGE,
V
CESAT
(V)
500
400
300
200
100
0
0.1 0.3
1
3
10
30
25℃
-40℃
125℃
V
CE
=5V
1
0.8
0.6
0.4
0.2
0
β=10
25℃
125℃
-40℃
100
500
100
300
1
10
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR CURRENT, I
C
(mA)
Base-Emitter Saturation Voltage vs
Collector Current
1
-40℃
0.8
0.6
0.4
0.2
0
1
10
100
β
=10
500
25℃
125℃
BASE EMITTER ON VOLTAGE,
V
BEON
(V)
BASE EMITTER VOLTAGE,
V
BESAT
(V)
Base Emitter ON Voltage vs Collector
Current
1
0.8
0.6
0.4
0.2
0
0.1
1
V
CE
=5V
10
25
-40℃
25℃
125℃
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR CURRENT, I
CBO
(nA)
100
10
1
0.1
0.01
Collector-Cutoff Current vs Ambient
Temperature
CAPACITANCE (pF)
Input and Output Capacitance vs Reverse
Bias Voltage
20
16
12
8
4
0
-0.1
-1
C
ob
C
ib
V
CB
=35V
25
50
75
100
125
-10
-50
AMBIENT TEMP ERATURE, Ta (℃)
REVERSE BIAS VOLTAGE (V)
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4
QW-R201-041.B
PN2907A
TYPICAL CHARACTERISTICS(cont.)
Switching Times vs Collector Current
250
200
TIME (nS)
PNP EPITAXIAL SILICON TRANSISTOR
I
C
I
B1
=I
B2
= 10
V
CC
=15V
TIME (nS)
500
400
t
s
300
200
100
0
Turn On and Turn Off Times vs Collector
Current
I
C
I
B1
=I
B2
= 10
V
CC
=15V
150
100
t
R
50
0
10
t
DLY
100
t
F
t
OFF
t
ON
10
100
COLLECTOR CURRENT, I
C
(mA)
1000
1000
COLLECTOR CURRENT, I
C
(mA)
Rise Time vs Collector and Turn On Base
Currents
t
R
=15V
Power Dissipation vs Ambient Temperature
20
10
5
30ns
2
1
10
60ns
100
COLLECTOR CURRENT, I
C
(mA)
500
POWER DISSIPATION, P
D
(W)
TURN ON BASE CURRENT ,
I
Bf
(mA)
50
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE, (℃)
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5
QW-R201-041.B
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