UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772ANL
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
*Pb-free plating product number: 2SD882ANLK
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
Ic
I
B
T
j
T
STG
RATINGS
40
30
5
1
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
DC current gain(note 1)
SYMBOL
TEST CONDITIONS
V
CB
=30V,I
E
=0
V
EB
=3V,Ic=0
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
Ic=2A,I
B
=0.2A
Ic=2A,I
B
=0.2A
V
CE
=5V,Ic=0.1A
V
CB
=10V,I
E
=0,f=1MHz
MIN
TYP
MAX
1000
1000
UNIT
nA
nA
I
CBO
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Current gain bandwidth product
f
T
Output capacitance
Cob
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-016,B
UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
150
Fig.2 Derating curve of safe
operating areas
12
Fig.3 Power Derating
Collector current, Ic (A)
1.6
1.2
100
Power Dissipation (W)
150
200
Ic Derating (%)
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
S/
8
bl
0.8
im
ite
d
Di
n
tio
ip a
ss
50
4
d
it e
lim
0.4
I
B
=2mA
I
B
=1mA
0
0
4
8
12
16
20
-50
0
50
0
0
100
-50
0
50
100
150
200
Collector-Emitter voltage (V)
Case Temperature, Tc (
℃
)
Case Temperature,Tc (
℃
)
Fig.4 Collector Output
capacitance
10
3
10
3
Fig.5 Current gain-
bandwidth product
1
10
Fig.6 Safe operating area
Ic(max),Pulse
Ic(max),DC
10
mS
1m
S
1m
0.
S
Current gain-
bandwidth product, F
T
(MHz)
Output Capacitance (pF)
10
2
I
E
=0
f=1MHz
Collector current, Ic (A)
0
1
10
V
CE
=5V
10
2
10
0
I
B
=8mA
10
1
10
1
-1
10
10
0
10
0
-1
10
10
-2
-3
10
10
0
10
-2
-1
10
10
10
-2
10
0
1
10
2
10
Collector-Base Voltage (v)
Collector current, Ic (A)
Collector-Emitter Voltage
Fig.7 DC current gain
10
3
10
4
Fig.8 Saturation Voltage
V
CE
=2V
Saturation Voltage (mV)
DC current Gain, H
FE
10
3
V
BE
(sat)
10
2
10
2
10
1
V
CE
(sat)
10
1
10
0
0
10
10
1
10
2
10
3
10
4
10
0
0
10
10
1
10
2
10
3
10
4
Collector current, Ic (mA)
Collector current, Ic (mA)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R211-016,B
UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R211-016,B
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